Semiconductor device

ABSTRACT

A semiconductor device in which a reduction in size and thinness are realized is provided. The semiconductor device of the present invention can realize a reduction in size by forming light emitting elements as a light source, and photodiodes as photoelectric conversion elements on the same substrate. Further, it becomes possible to control two signal lines by using one driver circuit with using an output switching circuit. As a result, it becomes possible to reduce the area occupied by the driver circuits of the semiconductor device, and the semiconductor device can be made smaller.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device which has alight source and is structured by photoelectric conversion elementsarranged and a plurality of transistors (hereafter referred to as TFTs)in a matrix shape. Further, the present invention relates to asemiconductor device which has photoelectric conversion elements, lightemitting elements, and a plurality of transistors formed on aninsulating surface or on a semiconductor substrate. The semiconductordevice of the present invention has a function as an image sensor and adisplay function of an image.

2. Description of the Related Art

Developments in solid state imaging devices which has photoelectricconversion elements such as diodes and CCDs, for reading out electricsignals with image information, from character information, drawinginformation, or the like on a page, have been advancing in recent years.The solid state imaging devices are used in devices such as scanners anddigital cameras.

Solid state imaging devices which has photoelectric conversion elementscan be roughly categorized into line sensor and area sensor types. Linesensors scan a subject using photoelectric conversion elements formed ina linear shape to take in image information as an electric signal.

In area sensors, on the other hand, also referred to as contact typearea sensors, photoelectric conversion elements provided in a plane(planar shape) are disposed on a subject and then take in imageinformation as an electric signal. Unlike line sensors, it is notnecessary to perform scanning operations of the photoelectric conversionelements with area sensors, and therefore it is unnecessary to employcomponents such as a motor used during scanning.

Devices which have image sensors such as line sensors or area sensorsare referred to as semiconductor devices in this specification. FIG. 5shows a schematic diagram of the structure of a conventionalsemiconductor device. Reference numeral 1001 denotes a CCD (CMOS) imagesensor, and an optical system 1002 such as a rod lens array is disposedon the image sensor 1001. The optical system 1002 is disposed so that animage of a subject 1004 is reflected on (irradiated to) the image sensor1001. In FIG. 5, the image relationship of the optical system 1002 istaken as being non-magnifying. A light source 1003 is disposed in aposition where light can be irradiated to the subject 1004. Componentssuch as LEDs or fluorescent lamps are employed as the light source 1003used for the semiconductor device shown in FIG. 5. A glass 1005 is thenplaced below the subject 1004. The subject 1004 is disposed above theglass 1005.

Light emitted form the light source 1003 is irradiated to the subject1004 through the glass 1005. The light irradiated to the subject isreflected by the subject 1004, and then made incident upon the opticalsystem 1002 through the glass 1005. The light made incident to theoptical system 1002 then inputs to the image sensor 1001, andinformation of the subject 1004 undergoes photoelectric conversion inthe image sensor 1001. Then, a signal showing information on the subject1004 which was electrically inverted is read out to the outside. Theimage sensor 1001 reads out information of the subject 1004 line byline, a scanner 1006 is moved after one line portion is read by theimage sensor 1001, and then similar operations are repeated.

Light from the light source 1003 is irradiated to the subject 1004through a medium, the glass 1005, in the semiconductor device describedabove and shown in FIG. 5. Thus, there are cases in which the light isnot uniformly irradiated with this structure, and this becomes aproblem. Further, the light reflected by the subject 1004 is irradiatedto the image sensor 1001 through another medium, the optical system1002. Therefore, There is occurred a problem that irregularities arecaused by the fact that the image becomes lighter in certain portionsand darker in other portions when the information subject 1004, which isread in, is shown on the image.

In addition, it is difficult to control the size of the optical lightsystem 1002 and the size of the light source 1003 with theaforementioned structure of the semiconductor device. Namely, it isdifficult to make the size of the optical system 1002 and the size ofthe light source 1003 smaller than a certain fixed size. As a result,the semiconductor device itself is prevented from being made smaller andthinner.

SUMMARY OF THE INVENTION

With the above circumstances, an object of the present invention istherefore to provide a semiconductor device in which irregularities inbrightness are not caused in a read-in image. In addition, an object ofthe present invention is to provide a semiconductor device that has beenmade smaller and thinner.

The present invention provides a semiconductor device in which aplurality of pixels are formed in matrix on the same substrate, eachpixel has a photoelectric conversion element, a light emitting element,and a thin film transistor (TFT) for controlling the elements. Asemiconductor device that has been made smaller and thinner can beprovided by forming the light emitting elements and the photoelectricconversion elements on the same substrate.

The light emitting elements function as light sources, and light emittedfrom the light emitting elements is reflected by a subject, and thenirradiated to the photoelectric conversion elements. An electric currentoccurs at this point when the light reflected by the subject isirradiated to the photoelectric conversion elements, and an electricsignal with image information of the subject (image signal) is takeninto the semiconductor device. Image information can thus be read byusing the photoelectric conversion elements. The light emitted from thelight emitting elements is uniformly irradiated to the subject with theabove structure, and therefore irregularities of the read-in image inbrightness do not develop in the semiconductor device of the presentinvention.

Further, a signal line driver circuit and an output switching circuitare used as driver circuits of the semiconductor device in the presentinvention. The signal line driver circuit outputs timing signals to theoutput switching circuit based on signals input from the outside. Theoutput switching circuit outputs different timing signals to signallines connected to the TFTs of the light emitting element portion, andto signal lines connected to the TFTs of the sensor portion. In otherwords, it becomes possible with employing the output switching circuitto control two signal lines by using one driver circuit. As a result, itbecomes possible to make the area occupied by the driver circuits of thesemiconductor device smaller, and a reduction in size of thesemiconductor device can be realized.

Note that the present invention is effective in semiconductor deviceswith any kind of structure which has light emitting elements andphotoelectric conversion elements. Furthermore, the present invention isalso effective in semiconductor devices which has liquid crystalelements that use a front light or a back light as a light source,instead of light emitting elements.

Note that the term “connection” has a meaning of electrical connectionthroughout this specification.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIG. 1 is a schematic diagram of a semiconductor device of the presentinvention;

FIGS. 2A and 2B are circuit diagrams of a driver circuit in asemiconductor device of the present invention;

FIG. 3 is a timing chart diagram of a driver circuit of the presentinvention;

FIGS. 4A and 4B are diagrams of signals input to TFTs formed in pixels;

FIG. 5 is a schematic diagram of a conventional semiconductor device;

FIG. 6 is a circuit diagram of a pixel portion of the present invention;

FIG. 7 is a circuit diagram of a pixel portion of the present invention;

FIG. 8 is a circuit diagram of a pixel portion of the present invention;

FIG. 9 is a circuit diagram of a pixel portion of the present invention;

FIG. 10 is a circuit diagram of a pixel portion of the presentinvention;

FIG. 11 is a schematic diagram of a semiconductor device of the presentinvention;

FIG. 12 is a timing chart of light emitted from light emitting elementswhen an image is read in;

FIG. 13 is a timing chart of light emitted from light emitting elementswhen an image is displayed;

FIG. 14 is a schematic diagram of a semiconductor device of the presentinvention;

FIG. 15 is a timing chart of light emitted from light emitting elementswhen an image is read in;

FIG. 16 is a schematic diagram of a semiconductor device of the presentinvention;

FIG. 17 is a circuit diagram of a sensor source signal line drivercircuit;

FIG. 18 is a circuit diagram of a sensor source signal line drivercircuit;

FIG. 19 is a circuit diagram of a sensor source signal line drivercircuit;

FIG. 20 is a timing chart diagram of a sensor source signal line drivercircuit;

FIG. 21 is a cross sectional structure diagram of a semiconductor deviceof the present invention;

FIG. 22 is a cross sectional structure diagram of a semiconductor deviceof the present invention;

FIG. 23 is a cross sectional structure diagram of a semiconductor deviceof the present invention;

FIG. 24 is a cross sectional structure diagram of a semiconductor deviceof the present invention;

FIG. 25 is a cross sectional structure diagram of a semiconductor deviceof the present invention;

FIG. 26 is a cross sectional structure diagram of a semiconductor deviceof the present invention;

FIGS. 27A to 27C are diagrams of examples of electronic equipment towhich the present invention is applied.

FIGS. 28A to 28C are diagrams of examples of electronic equipment towhich the present invention is applied.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment Mode 1

A semiconductor device of the present invention is explained withreference to FIG. 6. A pixel portion of a semiconductor device, in whichlight emitting elements, photoelectric conversion elements, and aplurality of thin film transistors (TFTs) are arranged in a matrix shapeand formed on the same substrate, is shown in FIG. 6. The pixel portionhas a plurality of pixels. Photodiodes are used as photoelectricconversion elements in embodiment mode 1.

Self light emitting elements such as EL elements are referred to aslight emitting elements in this specification. Light emitting elementshave: a layer containing an organic compound from whichelectroluminescence, generated by applying an electric field, can beobtained (hereinafter referred to as an organic compound layer); ananode layer; and a cathode layer. There are light emission occurringduring returning to a ground state from a singlet excitation state(fluorescence) and light emission occurring during returning to a groundstate from a triplet excitation state (phosphorescence) as types ofluminescence in organic compounds, and either type or both types oflight emission can be used.

Note that all layers formed between an anode and a cathode are definedas an organic compound layer in this specification. Specifically, lightemitting layers, hole injecting layers, electron injecting layers, holetransporting layers, electron transporting layers, and the like areincluded in the organic compound layer. Light emitting elementsbasically have a structure in which an anode, a light emitting layer,and a cathode are laminated in order. In addition to this structure,structures such as one in which an anode, a hole injecting layer, alight emitting layer, and a cathode are laminated in order, and one inwhich an anode, a hole injecting layer, a light emitting layer, anelectron transporting layer, and a cathode are laminated in order mayalso be used. An element formed by an anode, an organic compound layer,and a cathode is referred to as a light emitting element throughout thisspecification.

Further, and one of the following can be freely used as thephotoelectric conversion elements employed in this specification: PNtype photodiodes, PIN type diodes, avalanche type diodes, npn embeddedtype diodes, Schottky type diodes, photo transistors, photo conductors,and the like.

A pixel portion 100 has source signal line S1 to Sx, electric powersource supply lines V1 to Vx, selection signal lines EG1 to ECGy, resetsignal lines ER1 to ERy, sensor selection lines SG1 to SGy, sensor resetsignal lines SR1 to SRy, sensor signal output lines SS1 to SSx, andsensor electric power source lines VB1 to VBx.

The pixel portion 100 has a plurality of pixels. A pixel 101 has one ofthe source signal line S1 to Sx, one of the electric power source supplylines V1 to Vx, one of the selection signal lines EG1 to EGy, one of thereset signal lines ER1 to ERy, one of the sensor selection signal linesSG1 to SGy, one of the sensor reset signal lines SR1 to SRy, one of thesensor signal output lines SS1 to SSx, and one of the sensor electricpower source lines VB1 to VBx.

One of a source region and a drain region of a bias TFT 102 is connectedto one of the sensor signal output lines SS1 to SSx, and the other oneis connected to a voltage Vss (used for the bias TFT). Further, a gateelectrode of the bias TFT 102 is connected to a bias signal line BS.Note that the voltage Vss (used for the bias TFT) is connected if thebias TFT 102 is an n-channel TFT, and that a voltage Vdd (used for thebias TFT) is connected if the bias TFT 102 is a p-channel TFT.

Refer to FIG. 7. A detailed circuit structure of the pixel 101 is shownin FIG. 7. A region surrounded by the dotted line is a pixel of a numberi column and a number j row of the pixel portion 100 shown in FIG. 6 andis referred to as a pixel (i,j) in this specification. A pixel (i,j) hasa source signal line Si, an electric power source supply line Vi, asensor signal output wiring SSi, sensor electric power source line VBi,a selection signal line EGj, a reset signal line ERj, a sensor selectionsignal line SGj, and a sensor reset signal line SRj.

Note that a light emitting element, a photoelectric conversion element,and a plurality of transistors for controlling the elements are formedin the pixels of the semiconductor device of the present invention. Inorder to simplify the explanation, one pixel is separated into a lightemitting element portion and a sensor portion in this specification. Thelight emitting element and the plurality of transistors for controllingthe light emitting element are taken together as the light emittingelement portion. Further, the photoelectric conversion element and theplurality of transistors for controlling the photoelectric conversionelement are taken together as the sensor portion.

The pixel (i,j) has a light emitting element portion 211 and a sensorportion 221. The light emitting element portion 211 has a selection TFT212, a driver TFT 213, a reset TFT 214, a capacitor 215, and a lightemitting element 216. Although the capacitor 215 is formed in the pixel(i,j) in FIG. 7, the capacitor 215 need not be formed.

The light emitting element 216 is composed of an anode, a cathode, andan organic compound layer formed between the anode and the cathode. Theanode becomes a pixel electrode if the anode is connected to a sourceregion or a drain region of the driver TFT 213, and the cathode becomesan opposing electrode. Conversely, the cathode becomes the pixelelectrode if the cathode is connected to the source region or the drainregion of the driver TFT 213, while the anode becomes the opposingelectrode.

A gate electrode of the selection TFT 212 is connected to the selectionsignal line EGj. One of a source region and a drain region of theselection TFT 212 is connected to the source signal line Si, and theother one is connected to a gate electrode of the driver TFT 213. Theselection TFT 212 is a TFT which functions as a switching element inwriting in a signal to the pixel (i,j).

One of the source region and the drain region of the driver TFT 213 isconnected to the electric power source supply line Vi, and the other oneis connected to the light emitting element 216. The capacitor 215 isconnected to the gate electrode of the driver TFT 213 and to theelectric power source supply line Vi. The driver TFT 213 is a TFT whichfunctions as an element for controlling electric current supplied to thelight emitting element 216 (electric current control element).

One of a source region and a drain region of the reset TFT 214 isconnected to the electric power source supply line Vi, and the other oneis connected to the gate electrode of the driver TFT 213. A gateelectrode of the reset TFT 214 is connected to the reset signal lineERj. The reset TFT 214 is a TFT which functions as an element forerasing (resetting) the signal written into the pixel (i,j).

Further, the pixel (i,j) has a sensor selection TFT 222, a sensor driverTFT 223, and a sensor reset TFT 224 as the sensor portion 221. Inaddition, the pixel (i,j) has a photodiode 225 as a photoelectricconversion element in embodiment mode 1.

The photodiode 225 has an n-channel terminal, a p-channel terminal, anda photoelectric conversion layer formed between the n-channel terminaland the p-channel terminal. One of the p-channel terminal and then-channel terminal is connected to a voltage Vss (used for the sensor),and the other one is connected to a gate electrode of the sensor driverTFT 223.

A gate electrode of the sensor selection TFT 222 is connected to thesensor selection signal line SGj. One of a source region and a drainregion of the sensor selection TFT 222 is connected to a source regionof the sensor driver TFT 223, and the other one is connected to thesensor signal output line SSi. The sensor selection TFT 222 is a TFTwhich functions as a switching element when the a signal of photodiode225 is output.

A drain region of the sensor driver TFT 223 is connected to the sensorelectric power source line VBi, and the source region of the sensordriver TFT 223 is connected to the source region or the drain region ofthe sensor selection TFT 222. The sensor driver TFT 223 forms a sourcefollower circuit together with the bias TFT 102. It is thereforepreferable that the polarity of the driver TFT 223 and the polarity ofthe bias TFT 102 be the same.

A gate electrode of the sensor reset TFT 224 is connected to the sensorreset signal line SRj. One of a source region and a drain region of thesensor reset TFT 224 is connected to the sensor electric power sourceline VBi, and the other one is connected to the photodiode 225 and tothe gate electrode of the sensor driver TFT 223. The sensor reset TFT224 is a TFT which functions as an element for initializing thephotodiode 225.

Note that there are a case in which the light emitting element portionhas the light emitting element, the selection TFT, the driver TFT, andthe reset TFT (3 transistors/cell, Tr/cell), and a case in which thelight emitting element portion has the light emitting element, theselection TFT, and the driver TFT (2 Tr/cell). Furthermore, there are nolimitations on the number of TFTs contained within the light emittingelement portion although a detailed explanation is omitted in thisspecification. As the light emitting element portion of the pixels ofthe semiconductor device according to the present invention, any of thefollowing cases may also be applied; a case in which there are 4 TFTswithin one pixel (4 Tr/cell), a case in which there are 5 TFTs withinone pixel (5 Tr/cell), a case in which there are 6 TFTs within one pixel(6 Tr/cell), and the like.

Subsequently, please refer to FIG. 1. A schematic diagram of asemiconductor device according to the present invention is shown inFIG. 1. A selection signal line driver circuit 103 a and a selectionoutput switching circuit 103 b are formed in the periphery of the pixelportion 100, and a reset signal line driver circuit 104 a and a resetoutput switching circuit 104 b are formed. In addition, a source signalline driver circuit 105 and a sensor source signal line driver circuit106 are formed.

Refer to FIGS. 2A and 2B. FIG. 2A shows the selection signal line drivercircuit 103 a and the selection output switching circuit 103 b. FIG. 2Bshows the reset signal line driver circuit 104 a and the reset outputswitching circuit 104 b. Furthermore, although explained in embodimentmode 2, a timing chart of signals output from the selection signal linedriver circuit 103 a and from the selection output switching circuit 103b shown by FIG. 2A are shown in FIG. 3, and therefore may be referred toas needed.

FIG. 2A is used first to explain the selection signal line drivercircuit 103 a and the selection output switching circuit 103 b. FIG. 2Bis used next in explaining the reset signal line driver circuit 104 aand the reset output switching circuit 104 b.

Details on the selection signal line driver circuit 103 a and theselection output switching circuit 103 b is explained first using FIG.2A. The selection signal line driver circuit 103 a shown in FIG. 2A andthe reset signal line driver circuit 104 a shown in FIG. 2B have shiftregisters 110 and pulse width control circuits 111. The selection signalline driver circuit 103 a and the reset signal line driver circuit 104 ahave the shift registers 110 and the pulse width control circuits 111.However, the pulse width control circuits 111 need not be formed whennot necessary, and the selection signal line driver circuit 103 a andthe reset signal line driver circuit 104 a may also have only the shiftregisters 110.

The shift registers 110 generate timing signals based on signals inputfrom the outside. The term signals input from the outside indicatessignals such as clock signals, clock bank signals, and start pulses. Thetiming signals are then input to the pulse width control circuits 111adjacent to the shift registers 110 from a plurality of NAND circuits114 provided in the shift registers 110.

A pulse width control wiring 112 outputs timing signals with smallerpulse widths compared to the pulse widths of the timing signals inputfrom the shift registers.

The pulse width control circuits 111 have, for example, a plurality ofNOR circuits 115 and a plurality of inverter circuits 116 in embodimentmode 1. As shown in FIGS. 2A and 2B, input terminals of two NOR circuits115 are connected to output terminals of the pulse width control wiring112 and the NAND circuit 114. Further, output terminals of the NORcircuits 115 are connected to input terminals of the inverter circuit116. The NOR circuit 115 outputs a signal to the inverter circuit 116 bytaking the non-disjunction of the timing signal input from the NANDcircuit 114 and the signal input from the pulse width control wiring112.

An output terminal of the inverter circuit 116 is connected to an inputterminal of a NAND circuit 117 and to an input terminal of a NOR circuit120. The inverter circuit 116 outputs signals to two wirings by takingthe inversion of the signal input from the NOR circuit 115. The inputterminal of the NAND circuit 117 is connected to one of two wirings, andthe input terminal of the NOR circuit 120 is connected to the other oneof the two wirings.

As shown in FIG. 2A, one inverter circuit, or a plurality of invertercircuits, is connected to an output terminal of the NAND circuit 117 andto an output terminal of the NOR circuit 120 in some cases.

Note that the inverter circuit need not be connected to the outputterminal of the NAND circuit 117 and to the output terminal of the NORcircuit 120. In this case, a selection signal line EG is connected tothe output terminal of the NAND circuit 117 and a sensor selectionsignal line SG is connected to the output terminal of the NOR circuit120.

The number of the inverter circuits differs depending on the case of theNAND circuit 117 and the case of the NOR circuit 120 when the invertercircuits are connected. One inverter circuit, or a plurality of invertercircuits, is connected to the output terminal of the NAND circuit 117,and the selection signal line EG is connected in the end. One invertercircuit, or a plurality of inverter circuits, is connected to the outputterminal of the NOR circuit 120, and the sensor selection signal line SGis connected in the end. Furthermore, the number of the invertercircuits differs in accordance with the polarity of the TFTs to whichthe selection signal line EG and the sensor selection signal line SG areconnected.

The number of the inverter circuits connected to the output terminal ofthe NAND circuit 117, and the number of the inverter circuits connectedto the output terminal of the NOR circuit 120 are explained below ontheir respective signal lines.

The case of the selection signal line EG is explained first. Theselection signal line EG is connected to the end of the output terminalof the NAND circuit 117. If the selection TFT connected to the selectionsignal line EG is an n-channel TFT, then the number of inverter circuitsconnected to the output terminal of the NAND circuit 117 is an evennumber. Further, if the selection TFT is a p-channel TFT, then thenumber of inverter circuits connected to the output terminal of the NANDcircuit 117 is an odd number.

A case of using an n-channel TFT as the selection TFT is shown in FIG.2A as an example; in which two inverter circuits (even number) areconnected. An input terminal of an inverter circuit 118 is connected tothe output terminal of the NAND circuit 117. An input terminal of aninverter circuit 119 is then connected to an output terminal of theinverter circuit 118. The selection signal line EG is connected to anoutput terminal of the inverter circuit 119.

The case of the sensor selection signal line SG is explained next. Thesensor selection signal line SG is connected to the end of an outputterminal of an NOR circuit 120. The number of inverter circuitsconnected to the output terminal of the NOR circuit 120 is an evennumber when an n-channel TFT is used as the sensor selection TFTconnected to the sensor selection signal line SG. Further, the number ofinverter circuits connected to the output terminal of the NOR circuit120 is an odd number when a p-channel TFT is used as the sensorselection TFT.

A case in which the sensor selection TFT is an n-channel TFT is shown inFIG. 2A as an example, in which two (an even number) inverter circuitsare connected. An input terminal of an inverter circuit 121 is connectedto an output terminal of the NOR circuit 120. An input terminal of aninverter circuit 122 is connected to an output terminal of the invertercircuit 121, and the sensor selection signal line SG is connected to anoutput terminal of the inverter circuit 122.

The reset signal line driver circuit 104 a and the reset outputswitching circuit 104 b are explained next using FIG. 2B. The resetsignal line driver circuit 104 a has the shift register 110 and thepulse width control circuit 111. The shift register 110 and the pulsewidth control circuit 111 are described above, and therefore theexplanation is omitted here.

The number of the inverter circuits connected to an output terminal of aNAND circuit 127, and the number of the inverter circuits connected tothe output terminal of a NOR circuit 130 are explained below by theirrespective signal lines.

The case of the reset signal line ER is explained first. The resetsignal line ER is connected to the end of the output terminal of theNAND circuit 127. If the reset TFT connected to the reset signal line ERis an n-channel TFT, then the number of inverter circuits connected toan output terminal of the NAND circuit 127 is an odd number. Further, ifthe reset TFT is a p-channel then the number of inverter circuitsconnected to the output terminal of the NAND circuit 127 becomes an evennumber.

A case of using an n-channel TFT as the reset TFT is shown in FIG. 2B asan example; in which one inverter circuit (odd number) is connected. Aninput terminal of an inverter circuit 128 is connected to the outputterminal of the NAND circuit 127. The reset signal line ER is connectedto an output terminal of the inverter circuit 128.

The case of the sensor reset signal line SR is explained next. Thesensor reset signal line SR is connected to the end of an outputterminal of the NOR circuit 130. The number of inverter circuitsconnected to the output terminal of the NOR circuit 130 is an evennumber when an n-channel TFT is used as the sensor reset TFT connectedto the sensor reset signal line SR. Further, the number of invertercircuits connected to the output terminal of the NOR circuit 130 becomesan odd number when a p-channel 11.1 is used as the sensor reset TFT.

A case in which the sensor reset TFT is an n-channel TFT is shown inFIG. 2B as an example; in which two (an even number) inverter circuitsare connected. An input terminal of an inverter circuit 131 is connectedto an output terminal of the NOR circuit 130. An input terminal of aninverter circuit 132 is connected to an output terminal of the invertercircuit 131, and the sensor reset signal line SR is connected to anoutput terminal of the inverter circuit 132.

Note that one circuit of one of the following pairs is referred to as afirst logical circuit, and the other one is referred to as a secondlogical circuit in this specification: the NAND circuit 117 and the NORcircuit 120; and the NAND circuit 127 and the NOR circuit 130, alldescribed above.

One of the first logical circuit and the second logical circuit is aNAND circuit, and the other one is a NOR circuit. Further, one may be aNAND circuit while the other is an OR circuit. In addition, one may bean AND circuit and the other may be a NOR circuit, or one may be an ANDcircuit and the other may be an OR circuit.

Signal lines connected to the first logical circuit and to the secondlogical circuit are assumed to be a first signal line and a secondsignal line, respectively, in this specification.

One of the first signal line and the second signal line is a selectionsignal line, and the other one is a sensor selection signal line.Further, one may be a selection signal line, and the other a sensorreset signal line. One may also be a reset signal line, while the otheris a sensor selection signal line. Additionally, one may be a resetsignal line, and the other may be a sensor reset signal line.

TFTs connected to the first signal line and to the second signal lineare assumed to be a first TFT and a second TFT throughout thisspecification.

One of the first TFT and the second TFT is a selection TFT, and theother one is a sensor selection TFT. Further, one may be a selectionTFT, and the other a sensor reset TFT. One may also be a reset TFT,while the other is a sensor selection TFT. Additionally, one may be areset TFT, and the other may be a sensor reset TFT.

The semiconductor device of the present invention is characterized bycomprising an image sensing function, and an image display function; thesemiconductor device therefore has two modes (a read in mode and adisplay mode). An operator selects the read in mode in using the imagesensing function, and selects the display mode in using the imagedisplay function.

The light emitting elements 216 for forming the pixel portion 100uniformly emit light throughout the entire screen in the case of theread in mode, and therefore function as a light source. Light from thelight source (the light emitted from the light emitting elements 216) isreflected by a subject. The photodiodes 225 receive the light reflectedby the subject, and can read in information on the subject.

Further, an image is displayed by the plurality of light emittingelements 216 forming the pixel portion 100 in the case of the displaymode. The photodiodes 225 of the sensor portion 221 do not function inthe case of the display mode, and the semiconductor device of thepresent invention possesses a function which is similar to that of anormal display device.

Signals in accordance with the read in mode and the display modedescribed above are respectively input to a mode control wiring 113.

The input terminal of the NAND circuit 117 is connected to the modecontrol wiring 113 and to the output terminal of the inverter circuit116 in FIG. 2A, and the output terminal of the NAND circuit 117 isconnected to the input terminal of the inverter circuit 118. The NANDcircuit 117 outputs signals to the input terminal of the invertercircuit 118 by taking the non-conjunction of input signals. The outputterminal of the inverter circuit 118 is connected to the input terminalof the inverter circuit 119. The inverter circuit 118 outputs signals tothe input terminal of the inverter circuit 119 by taking the inversionof the input signals. The output terminal of the inverter circuit 119 isconnected to the selection signal line EG, and the inverter circuit 119outputs signals to the selection signal line EG by taking the inversionof the input signals.

The input terminal of the NOR circuit 120 is connected to the modecontrol wiring 113 and to the output terminal of the inverter circuit116 in FIG. 2A, and the output terminal of the NOR circuit 120 isconnected to the input terminal of the inverter circuit 121. The NORcircuit 120 outputs signals to the input terminal of the invertercircuit 121 by taking the non-disjunction of input signals. The outputterminal of the inverter circuit 121 is connected to the input terminalof the inverter circuit 122. The inverter circuit 121 outputs signals tothe input terminal of the inverter circuit 122 by taking the inversionof the input signals. The output terminal of the inverter circuit 122 isconnected to the sensor selection signal line SG, and the invertercircuit 122 outputs signals to the sensor selection signal line SG bytaking the inversion of the input signals.

The input terminal of the NAND circuit 127 is connected to the modecontrol wiring 113 and to the output terminal of the inverter circuit116 in FIG. 2B, and the output terminal of the NAND circuit 127 isconnected to the input terminal of the inverter circuit 128. The NANDcircuit 127 outputs signals to the input terminal of the invertercircuit 128 by taking the non-conjunction of input signals. The outputterminal of the inverter circuit 128 is connected to the reset signalline ER. The inverter circuit 128 outputs signals to the reset signalline ER by taking the inversion of the input signals.

The input terminal of the NOR circuit 130 is connected to the modecontrol wiring, 113 and to the output terminal of the inverter circuit116 in FIG. 2B, and the output terminal of the NOR circuit 130 isconnected to the input terminal of the inverter circuit 131. The NORcircuit 130 outputs signals to the input terminal of the invertercircuit 131 by taking the non-disjunction of input signals. The outputterminal of the inverter circuit 131 is connected to the input terminalof the inverter circuit 132. The inverter circuit 131 outputs signals tothe inverter circuit 132 by taking the inversion of the input signals.The output terminal of the inverter circuit 132 is connected to thesensor reset signal line SR, and the inverter circuit 132 outputssignals to the sensor reset signal line SR by taking the inversion ofthe input signals.

The selection output switching circuit 103 b and the reset outputswitching circuit 104 b are shown in FIGS. 2A and 2B as driver circuitsof the semiconductor device of the present invention, but these are justexamples. Although NAND circuits are used in FIGS. 2A and 2B, ANDcircuits may also be used as substitutes for the NAND circuits. Further,OR circuits may also be used as substitutes for the NOR circuits. Inaddition, a NAND circuit and a NOR circuit, or an AND circuit and an ORcircuit, may also be substituted. In other words, it is possible for adesigner to freely design the circuit structures of the signal linedriver circuit and the output switching circuit.

Note that the signal line driver circuit denotes one of the selectionsignal line driver circuit and the reset signal line driver circuit inthis specification. Further, the output switching circuit denotes one ofthe selection output switching circuit and the reset output switchingcircuit.

Embodiment Mode 2

Please refer to FIG. 3. A timing chart of signals in the driver circuitsshown in embodiment mode 1 is shown in FIG. 3. A timing chart of signalsoutput from the selection signal line driver circuit 103 a and from theselection output switching circuit 103 b is shown as one example inembodiment mode 2, and the operation of the selection signal line drivercircuit 103 a and the selection output switching circuit 103 b isexplained below.

Signals output from arbitrary adjacent NAND circuits 114 in FIG. 2A areassumed to be reference symbols b1 and b2. Timing signals with a smallerpulse width than the pulse width of the timing signals output from theNAND circuits 114 are output from the pulse width control wiring 112, asshown in FIG. 3. The output terminal of the NAND circuit 114 and thepulse width control wiring 112 are connected to the input terminal ofthe NOR circuit 115, and the input terminal of the inverter circuit 116is connected to the output terminal of the NOR circuit 115. The NORcircuit 115 outputs a signal denoted by reference symbol c1 to theinverter circuit 116 by taking the non-disjunction of the timing signalinput from the NAND circuit 114 and the signal input from the pulsewidth control wiring 112. The inverter circuit 116 inverts the signalinput form the NOR circuit 115 and outputs a signal denoted by referencesymbol d1.

Different signals are output from the mode control wiring 113 inaccordance with the cases of the display mode and the read in mode, asshown in FIG. 3. It is assumed that a high signal is always input in thedisplay mode, and a low signal is always input in the read in mode inembodiment mode 2.

The mode control wiring 113 and the output terminal of the invertercircuit 116 are connected to the input terminal of the NAND circuit 117,and the input terminal of the inverter circuit 118 is connected to theoutput terminal of the NAND circuit 117. The NAND circuit 117 outputs asignal to the inverter circuit 118 by taking the non-conjunction of thetiming signal input from the inverter circuit 116 and the signal inputfrom the mode control wiring 113. The input terminal of the invertercircuit 119 is connected to the output terminal of the inverter circuit118. The inverter circuit 118 inverts the input signal and outputs theinverted signal to the inverter circuit 119. The selection signal lineEG is connected to the output terminal of the inverter circuit 119. Theinverter circuit 119 inverts the input signal, and outputs a signaldenoted by reference symbol el to the selection signal line EG.

Also, the mode control wiring 113 and the output terminal of theinverter circuit 116 are connected to the input terminal of the NORcircuit 120, and the input terminal of the inverter circuit 121 isconnected to the output terminal of the NOR circuit 120. The NOR circuit120 outputs a signal to the inverter circuit 121 by taking thenon-distinction of the timing signal input from the inverter circuit 116and the signal input from the mode control wiring 113. The outputterminal of the inverter circuit 120 is connected to the input terminalof the inverter circuit 121. The inverter circuit 121 inverts the inputsignal and outputs the inverted signal to the inverter circuit 122. Thesensor selection signal line SG is connected to the output terminal ofthe inverter circuit 122. The inverter circuit 122 inverts the inputsignal, and outputs a signal denoted by reference symbol e2 to thesensor selection signal line EG.

The signals output to the selection signal line EG and to the sensorselection signal line SG are different, as shown in FIG. 3. Further, thesignals output to the selection signal line EG and to the sensorselection signal line SG are differerent depending on the case of thedisplay mode and the case of the read in mode.

Input terminals of two different circuits are connected to the outputterminal of the inverter circuit 116. The term “input terminals of twodifferent circuits” denotes the input terminal of the NAND circuit 117and the input terminal of the NOR circuit 120.

The case of inputting a high signal to the mode control wiring, 113 isexplained, along with the case of inputting a low signal.

The case of inputting a high signal to the mode control wiring 113 isexplained first. A high signal, which is a signal similar to the signaloutput from the output terminal of the inverter circuit 116, is outputto the selection signal line EG connected to the NAND circuit 117.Further, a signal always maintaining a fixed voltage is output to thesensor selection signal line SG connected to the NOR circuit 120regardless of the signal output from the output terminal of the invertercircuit 116.

The case of inputting a low signal to the mode control wiring 113 isexplained next. A low signal, which is a signal similar to that of theinverter circuit 116, is output to the sensor selection signal line SGconnected to the NOR circuit 120. Further, a signal always maintaining afixed voltage is output to the selection signal line EG connected to theNAND circuit 117 regardless of the output of the inverter circuit 116.Note that it is possible to freely combine embodiment mode 2 withembodiment mode 1.

Embodiment Mode 3

Please refer to FIGS. 4A and 4B. A signal generated from a source signalline driver circuit, signals input to TFTs respectively connected to theselection signal line EG and to the reset signal line ER, and a videosignal imparted to the light emitting element portion 211 are shown inFIG. 4A in the case of monochrome read in of a subject. The term “videosignal” denotes a digital video signal or an analog video signal.Further, signals input to the TFTs respectively connected to a sensorsignal output line SS, to the sensor selection signal line SG, and tothe sensor reset signal line SR in the sensor portion 221 are shown inFIG. 4A. Note that FIGS. 6 and 7 may be referred to regarding thestructure of a pixel portion in embodiment mode 3.

The selection TFT 212, the reset TFT 214, the sensor selection TFT 222,and the sensor reset TFT 224 are all n-channel TFTs in embodiment mode3. Further, the driver TFT 213 is a p-channel TFT. Signals correspondingto the polarities of these TFTs are shown in FIG. 4A. Note that thepolarities of the selection TFT 212, the reset TFT 214, the sensorselection TFT 222, the sensor reset TFT 224, and the driver TFT 213 canbe freely designed. However, it is necessary to design a circuit whichis capable of outputting signals corresponding to the polarity of theTFT in that case.

An on signal is a high signal and an off signal is a low signal when theTFT polarity is n-channel. Further, an on signal is a low signal and anoff signal is a high signal if the TFT polarity is p-channel.

Signals input to the light emitting element portion and to the sensorportion during the display mode and during the read in mode areexplained using FIG. 4A here. Note that a case of reading in amonochrome subject is shown in FIG. 4A, while a case of reading in acolor subject is shown in FIG. 4B. Only the case in which the monochromesubject is read in is explained in embodiment mode 3 using FIG. 4A.Reading in a color subject is discussed in embodiment 2.

The display mode is explained first. An image is displayed with theplurality of light emitting elements 216 forming the pixel portion 100in the display mode. The photodiodes 225 of the sensor portion 221 donot function in that case, and are always in an off state, and thesemiconductor device has a function similar to that of a normal displaydevice.

Note that the sensor portion 221 is not always in an off state and mayalways be in an on state instead. The sensor portion 221 may also bemade not to function as always being in an on state. However, if thesensor portion 221 is kept in an on state, there is electric powerconsumption in circuits such as the source follower circuit. Consideringthe electric power consumption, it is therefore preferable that thesensor portion 221 always be in an off state. Furthermore, the electricpower consumption can be controlled by placing the sensor portion 221 inan off state.

Electric current flows and there is electric power consumption in thedriver circuit in switching from an on state to an off state, and innswitching from an off state to an on state. In order to control theelectric power consumption, the voltage of each circuit elementstructuring the driver circuit is made not to change, and therefore anelectric current is made not to flow. In other words, the electric powerconsumption can be controlled by always making the sensor portion 221 bein an off state.

Pulse signals are generated from the source signal line driver circuit.Further, the selection signal line EG and the reset signal line ER inputpulse signals to the TFTs respectively connected thereto. A pulse signalis input as a video signal. Note that the term pulse signal indicates asignal in which the voltage changes temporally.

The sensor portion 221 does not function in the display mode, as statedabove. The sensor source signal line SS does not output a signal to theTFT connected thereto, and a fixed voltage is maintained. Further, offsignals (low signals in embodiment mode 3) are always input to the TFTsrespectively connected to the sensor selection signal line SG and to thesensor reset signal line SR. The signals input to the sensor selectionsignal line SG and to the sensor reset signal line SR are not pulsesignals, but rather are signals in which a fixed voltage is alwaysmaintained. Thus, the sensor selection signal line SG and the sensorreset signal line SR therefore always maintain a fixed voltage in thedisplay mode. As a result, electric current does not flow in the sensorportion 221 and thus it does not function.

The read in mode is explained next. A case of reading in a monochromesubject is explained using FIG. 4A in embodiment mode 3. The lightemitting elements 216 forming the pixel portion 100 uniformly emit lightthrough the entire screen, and function as a light source during theread in mode. Light from the light source (light emitted from the lightemitting elements 216) is reflected by the subject, and the photodiodes225 receive the reflected light. As a result, information regarding thesubject can be read in.

It is necessary that the light emitting elements 216 emit lightuniformly in the light emitting element portion 211. An on signal (ahigh signal in embodiment mode 3) is generated from the source signalline driver circuit. Further, an off signal (a low signal in embodimentmode 3) is input to the TFTs connected to the reset signal line ER. Asignal which is capable of placing the driver TFTs in an on state isinput to the driver TFTs as a video signal. Namely, an on signal (a lowsignal in embodiment mode 3) is input as the video signal. Furthermore,pulse signals are input to the TFTs respectively connected to the sensorsignal output signal line SS, to the sensor selection signal line SG,and to the sensor reset signal line SR in the sensor portion 221.

The signals input to the TFTs thus differ in the read in mode and in thedisplay mode in accordance with the signal lines.

Note that although only a case of performing monochrome read in of asubject is described in embodiment mode 3, the case of a color read inis explained in embodiment 2.

Note that it is possible to freely combine embodiment mode 3 withembodiment mode 1 and embodiment mode 2.

EMBODIMENTS Embodiment 1

As shown in FIG. 7, the case of 3 Tr/cell in a light emitting elementportion is explained in the embodiment modes. In embodiment 1, however,the case of a light emitting element portion with 2 Tr/cell is explainedwith reference to FIG. 8.

FIG. 8 shows a detailed circuit structure of one pixel in the case of 2Tr/cell in a light emitting element portion. A detailed circuitstructure is shown for a pixel (i,j) provided in a number i column and anumber j row in a pixel portion. The pixel (i,j) has the source signalline Si, the electric power source supply line Vi, the sensor signaloutput line SSi, sensor electric power source line VBi, the selectionsignal line EGj, the sensor selection signal line SGj, and the sensorreset signal line SRj.

The pixel (i,j) has a light emitting portion 231 and a sensor portion241. The light emitting element portion 231 has a selection TFT 232, adriver TFT 233, a capacitor 235, and a light emitting element 236.Although the capacitor 235 is formed in the pixel (i,j) in FIG. 8, thecapacitor 235 need not be formed. The sensor portion 241 has a sensorselection TFT 242, a sensor driver TFT 243, a sensor reset TFT 244, anda photodiode 245.

The light emitting element 236 is composed of an anode, a cathode, andan organic compound layer formed between the anode and the cathode. Theanode becomes a pixel electrode and the cathode becomes an opposingelectrode if the anode is connected to a source region or a drain regionof the driver TFT 233. Conversely, the cathode becomes the pixelelectrode and the anode becomes the opposing electrode if the cathode isconnected to the source region or the drain region of the driver TFT233.

A gate electrode of the selection TFT 232 is connected to the selectionsignal line EGj. One of a source region and a drain region of theselection TFT 232 is connected to the source signal line Si, and theother one is connected to a gate electrode of the driver TFT 233. Theselection TFT 232 is a TFT which functions as a switching element duringwrite in of a signal to the pixel (i,j).

One of the source region and the drain region of the driver TFT 233 isconnected to the electric power source supply line Vi, and the other oneis connected to the light emitting element 236. The capacitor 235 isconnected to the gate electrode of the driver TFT 233 and to theelectric power source supply line Vi. The driver TFT 233 is a TFT whichfunctions as an element for controlling electric current supplied to thelight emitting element 236 (electric current control element).

The photodiode 245 has an n-channel terminal, a p-channel terminal, anda photoelectric conversion layer provided between the n-channel terminaland the p-channel terminal. One of the p-channel terminal and then-channel terminal is connected to the voltage Vss (used for thesensor), and the other one is connected to a gate electrode of thesensor driver TFT 243.

A gate electrode of the sensor selection TFT 242 is connected to thesensor selection signal line SGj. One of a source region and a drainregion of the sensor selection TFT 242 is connected to a source regionof the sensor driver TFT 243, and the other one is connected to thesensor signal output line SSi. The sensor selection TFT 242 is a TFTwhich functions as a switching element when the signals from thephotodiode 245 are output.

A drain region of the sensor driver TFT 243 is connected to the sensorelectric power source line VBi, and the source region of the sensordriver TFT 243 is connected to the source region or the drain region ofthe sensor selection TFT 242. The sensor driver TFT 243 forms a sourcefollower circuit together with a bias TFT (not shown in the figure). Itis therefore preferable that the polarity of the driver TFT 243 and thepolarity of the bias TFT be the same.

A gate electrode of the sensor reset TFT 244 is connected to the sensorreset signal line SRj. One of a source region and a drain region of thesensor reset TFT 244 is connected to the sensor electric power sourceline VBi, and the other one is connected to the photodiode 245 and tothe gate electrode of the sensor driver TFT 243. The sensor reset TFT244 is a TFT which functions as an element for initializing thephotodiode 245.

A plurality of the pixels shown in FIG. 8 are formed on the samesubstrate in a matrix shape in the pixel portion. Driver circuits areformed in the periphery of the pixel portion, and a source signal linedriver circuit and a sensor source signal line driver circuit are formedas driver circuits for controlling the source signal lines S and thesensor signal output lines SS.

Further, a signal line driver circuit is formed for controlling theselection signal lines EG and the sensor selection signal liens SG. Anoutput switching circuit is connected to the signal line driver circuit.Further, the signal line driver circuit is not limited to controllingthe selection signal liens EG and the sensor selection signal lines SG,but also may be formed for controlling the selection signal lines EG andthe sensor reset signal lines SR. In this case, an output switchingcircuit is connected to the signal line driver circuit.

Note that it is possible to apply the invention disclosed in JapanesePatent Application No. 2000-067793 by the applicant of the presentinvention to the semiconductor device in embodiment 1 with 2 Tr/cell inthe light emitting element portion. Further, it is possible to freelycombine embodiment 1 with embodiment modes 1 to 3.

Embodiment 2

The case in which a light emitting portion has 2 Tr/cell is explained inembodiment 1, and an example of forming three light emitting elementportions each with 2tr/cell and one sensor portion in one pixel, isexplained in embodiment 2 using FIG. 9. Note that pixels may also beformed by using three light emitting element portions each with 3Tr/celland one sensor portion, or even in the case where other circuitstructure is used. Further, a pixel portion can be formed by the pixels.

Please refer to FIG. 9. Three light emitting element portions are formedfor the three primary colors of light, red (R), green (G), and blue (B).A light emitting element portion 251 is used for red (R), and has aselection TFT 251 a, a driver TFT 251 b, a capacitor 251 c, and a lightemitting element 251 d.

A light emitting element portion 252 is used for green (G), and has aselection TFT 252 a, a driver TFT 252 b, a capacitor 252 c, and a lightemitting element 252 d.

A light emitting element portion 253 is used for blue (B), and has aselection TFT 253 a, a driver TFT 253 b, a capacitor 253 c, and a lightemitting element 253 d.

Each of the light emitting element 251 d, 252 d, and 253 d is composedof an anode, a cathode, and a light emitting layer formed between theanode and the cathode. The anode becomes a pixel electrode and thecathode becomes an opposing electrode if the anode is connected to arespective source regions or drain regions of the driver TFT 251 d, 252b, and 253 b. Conversely, the cathode becomes the pixel electrode andthe anode becomes the opposing electrode if the cathode is connected tothe respective source regions or drain regions of the driver TFT 251 b,252 b, and 253 b.

A sensor portion 254 has a sensor selection TFT 254 a, a sensor driverTFT 254 b, a sensor reset TFT 254 c, and a photodiode 254 d.

The photodiode 254 d has an n-channel terminal, a p-channel terminal;and a photoelectric conversion layer formed between the n-channelterminal and the p-channel terminal. One of the n-channel terminal andthe p-channel terminal is connected to the voltage Vss (used for thesensor), and the other one is connected to a gate electrode of thesensor driver TFT 254 b.

A gate electrode of the sensor selection TFT 254 a is connected to thesensor selection signal line SGj. One of a source region and a drainregion of the sensor selection TFT 254 a is connected to a source regionof the sensor driver TFT 254 b, and the other one is connected to thesensor signal output line SSi. The sensor selection TFT 254 a is a TFTwhich functions as a switching element when signals from the photodiode254 d are output.

One of the drain region and the source region of the sensor driver TFT254 b is connected to the sensor electric power source line VBi, and theother one is connected to the source region or the drain region of thesensor selection TFT 254 a. The sensor driver TFT 254 b forms a sourcefollower circuit together with a bias TFT (not shown in the figure). Itis therefore preferable that the polarity of the sensor driver TN 254 band the polarity of the bias TFT be the same.

A gate electrode of the sensor reset TFT 254 c is connected to thesensor reset signal line SRj. One of a source region and a drain regionof the sensor reset TFT 254 c is connected to the sensor electric powersource line VBi, and the other one is connected to the photodiode 254 dand to the gate electrode of the sensor driver TFT 254 b. The sensorreset TFT 254 c is a TFT which functions as an element for initializingthe photodiode 254 d.

The pixel portion has a plurality of the pixels shown in FIG. 9 formedin a matrix shape on the same substrate. Driver circuits are formed inthe periphery of the pixel portion. For example, a source signal linedriver circuit for controlling a red color source signal line RS, agreen color source signal line GS; and a blue color source signal lineBS, and a sensor source signal line driver circuit for controlling thesensor signal output line SS may be formed.

Further, a signal line driver circuit is focused for controlling theselection signal lines EG and the sensor selection signal lines SG. Anoutput switching circuit is connected to the signal line driver circuit.Further, the signal line driver circuit is not limited to controllingthe selection signal lines EG and the sensor selection signal lines SG,but also may be formed for controlling the selection signal lines EG andthe sensor reset signal lines SR. In this case, an output switchingcircuit is connected to the signal line driver circuit.

Note that it is possible to apply the invention disclosed in JapanesePatent Application No. 2000-067793 by the applicant of the presentinvention to the semiconductor device in embodiment 2 with 2 Tr/cell inthe light emitting element portion.

Please refer to FIG. 4B. Signals input to the light emitting elementportion and to the sensor portion in each of the display mode and theread in mode, are explained using FIG. 4B.

Signals generated from the source signal line driver circuit, signalsoutput to the TFTs respectively connected to the selection signal lineEG and to the reset signal line ER, and video signals imparted to thelight emitting portions 251 to 253 are shown in FIG. 4B. Further,signals output to the TFTs respectively connected to the sensor signaloutput line SS, to the sensor selection signal line SG, and to thesensor reset signal line SR in the sensor portion 254 are shown. Notethat FIG. 9 may be referred to regarding the structure of the pixels inembodiment 2.

It is assumed that the polarity of the driver TFTs contained in thelight emitting element portions 251 to 253 is p-channel in embodiment 2,and the polarities of all other TFTs each are n-channel. It is possibleto freely design the polarities of the respective TFTs, but it thenbecomes necessary to output signals corresponding to those polarities.

In other words, an on signal is a high signal and an off signal is a lowsignal when the TFT polarity is n-channel, and further, an on signal isa low signal and an off signal is a high signal when the polarity of theTFT to which the signal is input is p-channel. It is necessary to designso that the appropriate signals are input.

The light emitting element 251 d, the light emitting element 252 d, andthe light emitting element 253 d display an image in the display mode.The photodiode 254 d of the sensor portion does not function in thiscase. Pulse signals are generated from the source signal line drivercircuit in this case. Further, the pulse signals are output to the TFTsrespectively connected to the selection signal line EG and to the resetsignal line ER. A pulse signal is output as the video signal.

The sensor portion 254 does not function in the display mode. The sensorsource signal line SS does not output a signal to the TFT connectedthereto, and a fixed voltage is maintained. Further, off signals (lowsignals in embodiment 2) are always input to the TFTs respectivelyconnected to the sensor selection signal line SG and to the sensor resetsignal line SR. Note that the signals output from the sensor selectionsignal line SG and from the sensor reset signal line SR are not pulsesignals, but rather are signals in which a fixed voltage is alwaysmaintained. The sensor selection signal line SG and the sensor resetsignal line SR therefore always maintain a fixed voltage in the displaymode. As a result, electric current does not flow in the sensor portion254 and thus it does not function.

Note that it is possible to read in a color subject not only as a colorimage but also as a monochrome with the pixel structure shown in FIG. 9.The case of performing read in as a monochrome image is explained firstin embodiment 2, and then read in as a color image is explained.

The read in mode in the case of reading a subject as a monochrome imageis explained. The light emitting element 251 d, the light emittingelement 252 d, and the light emitting element 253 d emit light uniformlyover the entire screen in the read in mode, and function as a lightsource. Light from the light source is reflected by the subject. Thesensor portion 254 receives the light reflected by the subject, andinformation regarding the subject is read in. It is necessary that thelight emitting element 251 d, the light emitting element 252 d, and thelight emitting element 253 d emit light uniformly in order to read inthe subject information.

In this case, an on signal (a high signal in embodiment 2) is generatedfrom the source signal line driver circuit. Further, an off signal (alow signal in embodiment 2) is input to the TFTs connected to the resetsignal line ER. A signal which is capable of placing the driver TFTs 251b, 252 b, and 253 b in an on state is input to the driver TFTs 251 b,252 b, and 253 b as a video signal. Namely, an on signal (a low signalin embodiment 2) is input as the video signal.

The read in mode in the case of reading in the subject as a color imageis explained next. The three light emitting element portions for thethree primary colors of light, red (R), green (G), and blue(B) areformed in the case of reading in the subject as a color image. Imagesare read in three times, once each for red (R), green (G), and blue (B),and then one image is formed by superimposing the three images.

The pulse signals are thus output to the TFTs respectively connected tothe sensor signal output signal line SS, to the sensor selection signalline SG, and to the sensor reset signal line SR in the sensor portion254.

As to the case of performing read in of a subject as a color image, thecases of reading in an R image, a G image, and a B image are explainedseparately below .

The case of reading in an R image is explained first. An on signal isgenerated from the source signal line driver circuit. An on signal isinput to a TFT connected to the selection signal line EG and an offsignal is input to a TFT connected to the reset signal line ER. An onsignal is then input to the R light emitting element portion 251 as avideo signal, and an off signal is input to the G light emitting elementportion 252 and an off signal is input to the B light emitting elementportion 253.

The case of reading in a G image is explained next. An on signal isgenerated from the source signal line driver circuit. An on signal isinput to a TFT connected to the selection signal line EG and an offsignal is input to a TFT connected to the reset signal line ER. As avideo signal, an on signal is then input to the G light emitting elementportion 252, an off signal is input to the R light emitting elementportion 251 and an off signal is input to the B light emitting elementportion 253.

The case of reading in a B image is explained last. An on signal isgenerated form the source signal line driver circuit. An on signal isinput to a TFT connected to the selection signal line EG and an offsignal is input to a TFT connected to the reset signal line ER. As avideo signal, the on signal is then input to the B light emittingelement portion 253, and an off signal is input to the R light emittingelement portion 251 and an off signal is input to the G light emittingelement portion 252.

The subject image is thus read in three times with dividing into thethree colors R, G, and B, and the subject can be read in as a colorimage by later combining the three images.

The signals input to the TFTs thus differ in the read in mode and in thedisplay mode in accordance with the signal lines.

Note that the case of forming three light emitting element portions andone sensor portion in one pixel, and then reading in a subject as acolor image by pixel is explained in embodiment 2. However, it ispossible to read in the subject as a monochrome image instead of readingin the subject as a color image when three light emitting elementportions and one sensor portion are formed in one pixel. In other words,all of the three light emitting element portions in one pixel may bemade to emit light in reading in as a monochrome image. Further, anarbitrary two of the light emitting element portions out of the threelight emitting element portions in one pixel may be made to emit light,and an arbitrary one light emitting element portion out of the threelight emitting element portions in one pixel may also be made to emitlight. However, there is a case where red color portions of a subjectare not read in when emitting light only from the red color (R) lightemitting element portion.

Furthermore, it is possible to freely combine embodiment 2 withembodiment modes 1 to 3, and with embodiment 1.

Embodiment 3

Examples of using light emitting elements as a light source are shown inembodiment modes 1 to 3, and in embodiments 1 and 2, but a front lightor a back light can also be used in a semiconductor device of thepresent invention. However, in this case, subject information obtainedfrom an image sensor function is displayed by a liquid crystal elementportion provided in a pixel portion of a semiconductor device.

Please refer to FIG. 10. One pixel has a liquid crystal element portion261 and a sensor portion 271 in a semiconductor device of embodiment 3.The liquid crystal element portion 261 has a liquid crystal selectionTFT 262, a capacitor 263, and a liquid crystal element 264. Further, thesensor portion 271 has a sensor selection TFT 272, a sensor driver TFT273, a sensor reset TFT 274, and a photodiode 275.

A gate electrode of the liquid crystal selection TFT 262 is connected tothe liquid crystal selection signal line EGj. One of a source region anda drain region of the selection TFT 262 is connected to the sourcesignal line Si, and the other one is connected to the liquid crystalelement 264 and to the capacitor 263. The liquid crystal selection TFT262 is a TFT which functions as a switching element in writing a signalinto the pixel (i,j).

A gate electrode of the sensor selection TFT 272 is connected to thesensor selection signal line SGj. One of a source region and a drainregion of the sensor selection TFT 272 is connected to a source regionof the sensor driver TFT 273, and the other one is connected to thesensor signal output line SSi. The sensor selection TFT 272 is a TFTwhich functions as a switching element when a signal of the photodiode275 is output.

The drain region of the sensor driver TFT 273 is connected to the sensorelectric power source line VBi, and the source region of the sensordriver TFT 273 is connected to the source region or the drain region ofthe sensor selection TFT 272. The sensor driver TFT 273 forms a sourcefollower circuit together with a bias TFT (not shown in the figure). Itis therefore preferable that the polarity of the sensor driver TFT 273and the polarity of the bias TFT be the same.

A gate electrode of the sensor reset TFT 274 is connected to the sensorreset signal line SRj. One of a source region and a drain region of thesensor reset TFT 274 is connected to the sensor electric power sourceline VBi, and the other one is connected to the photodiode 275 and tothe gate electrode of the sensor driver TFT 273. The sensor reset TFT274 is a TFT which functions as an element for initializing thephotodiode 275.

The pixel portion has a plurality of the pixels shown in FIG. 10 formedin a matrix shape on the same substrate. Driver circuits are formed inthe periphery of the pixel portion. A liquid crystal source signal linedriver circuit for controlling the source signal lines S, and a sensorsource signal line driver circuit for controlling the sensor signaloutput lines SS are formed.

Further, a signal line driver circuit for controlling the liquid crystalselection signal lines EG and the sensor selection signal lines SG isformed. An output switching circuit is connected to the signal linedriver circuit. The signal line driver circuit is not limited tocontrolling the liquid crystal selection signal lines EG and the sensorselection signal lines SG, and may also be formed in order to controlthe selection signal lines EG and the sensor reset signal lines SR. Anoutput switching circuit is connected to the signal line driver circuitin this case as well.

Note that it is possible to freely combine embodiment 3 with embodimentmodes 1 to 3, and with embodiments 1 and 2.

Embodiment 4

A method of driving the selection TFT 212 and the driver TFT 213 forcontrolling the operation of the light emitting elements 216 isexplained in embodiment 4. Please refer to FIGS. 6 and 7 regarding thestructure of the pixel portion 100 in embodiment 4.

A block diagram of a semiconductor device of the present invention isshown in FIG. 11. The selection signal line driver circuit 103 a and theselection output switching circuit 103 b are formed in the periphery ofthe pixel portion 100, and the reset signal line driver circuit 104 aand the reset output switching circuit 104 b are also formed. Further,the source signal line driver circuit 105 and the sensor source signalline driver circuit 106 are formed in the periphery of the pixel portion100.

The source signal line driver circuit 105 has a shift register 105 a, alatch (A) 105 b, and a latch (B) 105 c. A clock signal CLK and a startpulse SP are input to the shift register 105 a in the source signal linedriver circuit 105. The shift register 105 a generates timing signals inorder based upon the clock signal CLK and the start pulse SP, and thetiming signals are supplied one after another to downstream circuits.

Note that the timing signals from the shift register circuit 105 a maybe buffer amplified by a circuit such as a buffer (not shown in thefigure) and then supplied one after another to the downstream circuitsas buffer amplified timing signals. The load capacitance (parasiticcapacitance) of a wiring to which the timing signals are supplied islarge because many of the circuits and elements are connected to thewiring. The buffer is formed in order to prevent dullness in the riseand fall of the timing signal, generated because the load capacitance islarge.

The timing signals from the shift register 105 a are supplied to thelatch (A) 105 b. The latch (A) 105 b has a plurality of latch stages forprocessing digital signals. The latch (A) 105 b writes in and holds thedigital signals simultaneously with the input of the timing signals.

Note that the digital signals may be input in order to a plurality oflatch stages of the latch (A) 105 b when the latch (A) 105 b takes inthe digital signals. The plurality of latch stages in the latch (A) 105b may also be divided into several groups and the digital signals may beinput simultaneously by group, namely divided drive may also beperformed. Note that the number of groups is referred to as the numberof divisions. For example, in the case of dividing the latch (A) intogroups by four stages, this is called divided drive using fourdivisions.

A period until write in of the digital signal to all of the latch stagesof the latch (A) 105 b is complete is referred to as a line period. Inother words, the line period is the time period from the point at whichwrite in of the digital signal into the leftmost latch stage of thelatch (A) 105 b is started to the point at which write in of the digitalsignal into the rightmost latch stage of the latch (A) 105 b iscomplete. In practice, the line period is a period in which a horizontalreturn period is added to the period described above.

A latch signal it supplied to the latch (B) 105 c when one line periodis complete. The digital signal written into and held in the latch A 105b is sent all at one to the latch (B) 105 c at this instant, and iswritten into all of the latch stages of the latch (B) 105 c, and held.

Write in of the digital signal is once again performed in order in thelatch (A) 105 b based on a timing signal from the shift register 105 aafter the latch (A) 105 b sends the digital signal to the latch (B) 105c.

The digital signal written into and held in the latch (B) 105 c is theninput to the source signal lines S during a second line period.

Note that the structure of the source signal line driver circuit is notlimited to the structure shown in embodiment 4.

A timing chart in the case of driving the selection TFT 212 and thedriver TFT 213, which control the operation of the light emittingelements 216 of the pixel portion 100, by a digital method is shown inFIG. 12. The driving method is explained below.

A period through which all of the pixels of the pixel portion 100 emitlight is referred to as one frame period F. The frame period is dividedinto an address period Ta and a sustain period Ts. The address period isa period in which a digital signal is input to all of the pixels duringone frame period. The sustain period (also referred to as a turn-onperiod) shows a period in which the Light emitting elements emit light,or do not display light, in accordance with the digital signal input tothe pixels in the address period, and in which display is performed.

First, in the address period Ta, the electric potential of the opposingelectrode of the light emitting element is maintained at the same heightas the electric potential of the electric power source supply line V(electric power source potential.)

The selection TFT 212 connected to the selection signal line EG1 then isturned on in accordance with a gate signal input to the selection signalline EG1. A digital signal is next input from the source signal linedriver circuit 105 to the source signal line S. The digital video signalinput to the source signal line S is input to the gate electrode of thedriver TFT 213 through the selection TFT 212 which is in an on state.

Next, all of the selection TFTs 212 connected to the selection signalline EG2 then turns on in accordance with a signal input to theselection signal line EG2. A digital video signal is next input from thesource signal line driver circuit 105 to the source signal line S. Thedigital video signal input to the source signal line S is input to thegate electrode of the driver TFT 213 through the selection TFT 212 whichis in an on state.

The above operations are repeated through the selection signal line EGy,the digital signal is input to the gate electrodes of the driver TFTs213 of all of the pixels 101, and the address period Ta ends.

The sustain period Ts begins simultaneously with the end of the addressperiod Ta. All of the selection TFTs 212 are placed in an off state inthe sustain period Ts.

Then, at the same time as the sustain period begins, the electricpotential of opposing electrodes of all of the light emitting elements216 becomes high enough to have the electric potential difference fromthe electric power source potential at a level at which the lightemitting elements 216 will emit light when the electric power sourcepotential is applied to the pixel electrodes. Note that the electricpotential difference between pixel electrodes and the opposing electrodeis referred to as a driving voltage in this specification. Further, thedriver TFTs 213 are placed in an on state in accordance with the videosignal input to the gate electrode of the driver TFTs 213 of each pixel.Therefore, the electric power source potential is applied to the pixelelectrodes of the light emitting elements 216, and the light emittingelements 216 of all pixels emit light.

One frame period is complete with the completion of the sustain periodTs.

Note that although an explanation of a method of driving ansemiconductor device for reading in a subject as a monochrome image ismade in embodiment 1, the case of reading in a subject as a color imageis similar. However, in the case of a semiconductor device which readsin a color image, one frame period is divided into three sub-frameperiods corresponding to RGB, and an address period and a sustain periodare formed in each sub-frame period. A signal is input to all of thepixels such that only the light emitting elements of pixelscorresponding to R will emit light, and only the light emitting elementsfor the color R perform light emission in the sustain period. Similarlyin the sub-frame periods for G and B, only light emitting elements ofpixels corresponding to the respective colors perform light emissionduring each sustain period.

It is important that each sustain period of the three sub-frame periodscorresponding to RGB contains a sensor frame period for R, G, and B(SFr, SFg, SFb), respectively, in the case where the semiconductordevice is used to read in a color image.

Further, it is possible to freely combine embodiment 4 with embodimentmodes 1 to 3, and with embodiments 1 to 3.

Embodiment 5

A method of driving the selection TFTs 212 and the driver TFTs 213 forcontrolling the operation of the light emitting elements 216 witchdiffers from that of embodiment 4 is explained in embodiment 5. Pleaserefer to FIGS. 6 and 7 regarding the structure of the pixel portion 100in embodiment 5.

A timing chart for performing display of an image in the pixel portion100 in the semiconductor device of the present invention by a digitalmethod is shown in FIG. 13.

First, one frame period F is divided into n sub-frame periods SF1 toSFn. The number of sub-frame periods in one frame period also increasesas the number of grey scales increases. Note that, when the pixelportion 100 of the semiconductor device displays an image, one frameperiod F shows a period during which all pixels 101 of the pixel portion100 display one image.

It is preferable that 60 or more frame periods be formed each second inembodiment 5. It becomes possible to visually suppress image flicker bysetting the number of images displayed each second to 60 or more.

The sub-frame period is divided into an address period Ta and a sustainperiod Ts. The address period is a period during which a digital videosignal is input to all pixels within one sub-frame period. Note that thedigital video signal is a digital signal having image information. Thesustain period (also referred to as a turn-on period) shows a periodduring, which the light emitting elements are placed in a state ofemitting light, or a state of not emitting light, in accordance with thedigital video signal input to the pixels in the address period, anddisplay is performed.

The address periods Ta of the sub-frame periods SF1 to SFn are assumedto be address periods Ta1 to Tan, and the sustain periods Ts of thesub-frame periods SF1 to SFn are assumed to be sustain periods Ts1 toTsn.

The electric potential of the electric power source supply lines (V) ismaintained at a predetermined electric potential (electric power sourcepotential).

First, the electric potential of the opposing electrodes of the lightemitting elements is maintained at the same level as the electric powersource potential in the address period Ta.

Next, all of the selection TFTs 212 connected to the selection signalline EG1 are placed in an on state in accordance with a signal input tothe selection signal line EG1. The digital video signal is then input tothe source signal lines S from the source signal line driver circuit105. The digital video signal has “0” information or “1” information,one of which is a signal having a high voltage, while the other is asignal having a low voltage.

The digital video signal input to the source signal lines S is theninput to the gate electrodes of the driver TFTs 213 through theselection TFTs 212 in the on state.

All of the selection TFTs 212 connected to the selection signal line EG1are then placed in an off state, and all of the selection TFTs 212connected to the selection signal line EG2 are placed in an on state inaccordance with a timing signal input to the selection signal line EG2.The digital video signal is then input to the source signal lines S fromthe source signal line driver circuit 105. The digital video signalinput to the source signal lines S is input to the gate electrodes ofthe driver TFTs 213 through selection TFTs 212 in the on state.

The above operations are repeated through the selection signal line EGy,and the digital video signal is input to the gate electrodes of thedriver TFTs 213 of all of the pixels 101, and the address period iscomplete.

The sustain period begins at the same time as the address period iscompleted. All of the selection TFTs are in an off state in the sustainperiod. The electric potential of the opposing electrodes of all of thelight emitting elements becomes high enough to have the electricpotential difference from the electric power source potential at thelevel at which the light emitting elements emit light when the electricpower source potential is applied to the pixel electrodes.

When the digital video signal has “0” information, the driver TFTs 213are placed in an off state in embodiment 5. The pixel electrodes of thelight emitting elements 216 are therefore maintained at the electricpotential of the opposing electrodes. As a result, the light emittingelements 216 do not emit light in the pixel into which a digital videosignal having “0” information is input.

Conversely, when the digital video signal has “1” information, thedriver TFTs 213 are placed in an on state. The electric power sourcepotential is therefore applied to the pixel electrodes of the lightemitting elements 216. As a result, the light emitting elements 216 ofthe pixels into which the digital video signal having “1” information isinput emit light.

The light emitting elements are thus placed in a state in which theyemit light or in a state in which they do not emit light in accordancewith the information of the digital video signal input to the pixels,and the pixels perform display.

One sub-frame period is complete at the same time as the sustain periodis complete. The next sub-frame period then appears, and once again theaddress period begins. The sustain period beings again after the digitalvideo signal is input to all of the pixels. Note that the order ofappearance of the sub-frame periods SF1 to SFn is arbitrary.

Similar operations are then repeated in the remaining sub-frame periods,and display is performed. After completing all of the n sub-frameperiods, one image is displayed, and one frame period is complete. Whenone frame period is complete, the sub-frame period of the next frameperiod appears, and the aforementioned operations are repeated.

The lengths of the address periods Ta1 to Tan of the respective nsub-frame periods are each the same in the present invention. Further,the ratio of lengths of the n sustain periods Ts1, . . . , Tsn isexpressed by Ts1:Ts2:Ts3: . . . :Ts(n−1):Tsn=2⁰:2⁻¹:2⁻²: . . .:2^(−(n−2)):2^(−(n−1)).

The grey-scale of each pixel is determined in accordance with duringwhich sub-frame periods in one frame period the pixel is made to emitlight. For example, when n=8, pixels which emit light in Ts1 and Ts2 canexpress a brightness of 75%, assuming the brightness of pixels whichemit light in all of the sustain periods to have a value of 100%, and inthe case of selecting Ts3, Ts5, and Ts8, a brightness of 16% can beexpressed.

Note that it is possible to freely combine embodiment 5 with embodimentmodes 1 to 3, and with embodiments 1 to 4.

Embodiment 6

The electric potential of the opposing electrodes is maintained at thesame electric potential as that of the electric power source potentialduring the address period in embodiments 4 and 5, and the light emittingelements do not emit light. An example which differs from those ofembodiment 4 and embodiment 5 is explained in embodiment 6. Display mayalso be performed in the address period, similarly in the display of thedisplay period, if an electric potential difference is always formedbetween the opposing electric potential and the electric power sourcepotential, at a level at which the light emitting elements will emitlight when the electric power source potential is applied to the pixelelectrodes.

However, when combining embodiment 6 with a case of using the lightemitting elements as a light source, it is important that the sensorframe period SF be contained within the frame period in a semiconductordevice that reads in a monochrome image. Furthermore, it is importantthat the three sub-frame periods corresponding to RGB be contained withR, G, and B sensor frame periods, respectively, in a semiconductordevice which reads in a color image.

In addition, when combining a case of image display in a sensor portionwith embodiment 6, the entire sub-frame period becomes a period forperforming display in practice, and therefore the lengths of thesub-frame periods are set so as to be SF1:SF2:SF3: . . .:SF(n−1):SFn=2⁰: 2⁻¹:2⁻²: . . . 2^(−(n−1)):2^(−(n−2)). An image having ahigher brightness can be obtained in accordance with the above structurein comparison with the driver method in which light is not emittedduring the address period.

Furthermore, it is possible to freely combine embodiment 6 withembodiment modes 1 to 3, and with embodiments 1 to 5.

Embodiment 7

A method of driving the selection TFTs 212 and the driver TFTs 213 forcontrolling the operation of the light emitting elements 216, thatdiffers from those of embodiments 4 to 6, is explained in embodiment 7.Please refer to FIGS. 6 and 7 regarding the structure of the pixelportion 100 in embodiment 7.

FIG. 14 shows a block diagram of a semiconductor device of embodiment 7.The selection signal line driver circuit 103 a and the selection outputswitching circuit 103 b are formed in the periphery of the pixel portion100, and the reset signal line driver circuit 104 a and the reset outputswitching circuit 104 b are also formed. Further, the source signal linedriver circuit 105 and the sensor source signal line driver circuit 106are formed.

The source signal line driver circuit 105 has a shift register 105 a, alevel shifter 105 b, and a sampling circuit 105 c. Note that the levelshifter 105 b may be used by the designer when necessary. Further,although a structure is used in embodiment 7 in which the level shifter105 b is formed between the shift register 105 a and the samplingcircuit 105 c, the present invention is not limited to this structure. Astructure in which the level shifter 105 b is incorporated within theshift register 105 a may also be used.

A clock signal CLK and a start pulse signal SP are input to the shiftregister 105 a. A sampling signal is output from the shift register 105a in order to sample an analog signal. The output sampling signal isinput to the level shifter 105 b, its electric potential amplitude isincreased, and it is output.

The sampling signal output from the level shifter 105 b is input to thesampling circuit 105 c. The analog signal input to the sampling circuit105 c is then sampled by the sampling signal, and input to source signallines S.

On the other hand, the selection signal line driver circuit 103 a has ashift register and a buffer (neither shown in the figure).

A timing signal is supplied to the buffer (not shown in the figure) fromthe shift register (also not shown in the figure) in the selectionsignal line driver circuit 103 a, and this is supplied to acorresponding selection signal line. Gate electrodes of the selectionTFTs 212 of one line portion of pixels are connected to the selectionsignal lines EG, and all of the selection TFTs 212 of the one lineportion of pixels must be placed in an on state simultaneously.Therefore, a buffer in which a large electric current is capable offlowing, is used.

Next, a timing chart in the case of driving the selection TFTs 212 andthe driver TFTs 213 by an analog method is shown in FIG. 15. A periodthrough which all of the pixels of the pixel portion 100 emit light isreferred to as one frame period F. One line period L shows a period fromthe selection of one selection signal line to the selection of the next,another, selection signal line. In the case of the semiconductor deviceshown in FIG. 15, there are y selection signal lines, and therefore yline periods L1 to Ly are formed within one frame period.

The number of line periods within one frame period increases along withincreasing resolution, and the driver circuits must be driven at a highfrequency.

First, the electric potential of the electric power source supply linesV is maintained at a constant electric power source potential. Theopposing electric potential, the electric potential of the opposingelectrodes of the light emitting elements, is also maintained at aconstant electric potential. The electric power source potential has anelectric potential difference from the opposing electric potential at alevel at which the light emitting elements will emit light when theelectric power supply potential is applied to the pixel electrodes ofthe light emitting elements.

In the first line period L1, all of the selection TFTs 212 connected tothe selection signal line EG1 are placed in an on state in accordancewith a timing signal input to the selection signal line EG1 from theselection signal line driver circuit 103 a. The analog signal is theninput to the source signal lines S, in order, from the source signalline driver circuit 105. The analog signal input to the source signallines S is input to the gate electrodes of the driver TFTs 213 throughthe selection TFTs 212 which are in an on state.

The size of the electric current flowing in a channel forming region ofthe driver TFTs 213 is controlled by the level of the electric potential(voltage) of the signal input to the gate electrodes of the driver TFTs213. Therefore, the electric potential applied to the pixel electrodesof the light emitting elements 216 is determined by the value of theelectric potential of the analog signal input to the gate electrodes ofthe driver TFTs 213. The light emitting elements 216 are controlled bythe electric potential of the analog signal, and perform the emission oflight. Note that the analog signal input to all of the pixels ismaintained at the same electric potential level in embodiment 7.

The first line period L1 is complete when input of the analog signal tothe source signal lines S is complete. Note that the period until theinput of the analog signal to the source signal lines S may also becombined with a horizontal return period and taken as one line period.The second line period L2 begins next, and all of the selection TFTs 212connected to the selection signal line EG1 are placed in an off state.All of the selection TFTs 212 connected to the selection signal line EG2are then placed in an on state in accordance with a gate signal input tothe selection signal line EG2. Then, similarly in the first line periodL1, the analog signal is input in order to the source signal lines S.

The above operations are repeated through the selection signal line EGy,and all of the line periods L1 to Ly are complete. When all of the lineperiods L1 to Ly are complete, one frame period is complete. The lightemitting elements of all of the pixels perform light emission bycompleting one frame period. Note that all of the line periods L1 to Lyand a vertical return period may also be combined and taken as one frameperiod.

It is necessary for the pixels to emit light in all of the samplingperiods ST1 to STy in the present invention, and it is important thatthe sensor frame period SF is included within the frame period in thecase of the driving method of embodiment 7,

Note that although an explanation of a method of driving a semiconductordevice for reading in a monochrome image is explained in embodiment 4, acase of reading in a color image is similar. However, one frame periodis divided into three sub-frame periods corresponding to RGB in the caseof a semiconductor device which reads in a color image. An analog signalis then input to all of the pixels such that only the light emittingelements of pixels corresponding to R will emit light in an R sub-frameperiod, and only the light emitting elements for the color R performlight emission. Similarly in the sub-frame periods for G and B, onlylight emitting elements of pixels corresponding to the respective colorsperform light emission.

It is important that each sustain period of the three sub-frame periodscorresponding to RGB contains a sensor frame period for R, G, and B(SFr, SFg, SFb), respectively, in a semiconductor device that reads incolor images.

Note that it is possible to freely combine embodiment 7 with embodimentmodes 1 to 3. and with embodiments 1 to 6.

Embodiment 8

FIG. 16 shows a block diagram of a semiconductor device of embodiment 8.The selection signal line driver circuit 103 a and the selection outputswitching circuit 103 b are formed in the periphery of the pixel portion100, and the reset signal line driver circuit 104 a and the reset outputswitching circuit 104 b are also formed. Further, the source signal linedriver circuit 105 and the sensor source signal line driver circuit 106are formed.

Note that FIGS. 6 and 7 may be referred to regarding the structure ofthe pixel portion 100 in embodiment 8. A method of driving the sensorportion 221 is explained while focusing on the sensor portion 221 whichstructures the pixel portion 100, in embodiment 8.

The sensor source signal line driver circuit 106 has a bias circuit 106a, a sample hold and signal processing circuit 106 b, a signal outputdriver circuit 106 c, and a final output amplifier circuit 106 d.

The bias circuit 106 a forms a pair with the sensor driver TFT 212 ofeach pixel to form a source follower circuit. The sample hold and signalprocessing circuit 106 b is formed in the lower portion of the biascircuit 106 a. The sample hold and signal processing circuit 106 b is acircuit formed to temporarily store a signal, to perform analog todigital conversion, and to reduce noise.

The signal output driver circuit 106 c is formed in the lower portion ofthe sample hold and signal processing circuit 106 b. The signal outputdriver circuit 106 c outputs signals for outputting the temporarilystored signals to the pixel portion 100. The final output amplifiercircuit 106 d amplifies signals output from the sample hold and signalprocessing circuit 106 b and from the signal output driver circuit 106 cin order to perform output to the outside. In other words, it isunnecessary when the signals are not amplified, but is often formed.

Please refer to FIG. 17. A circuit diagram of a number i columnperipheral circuit 505 of the bias circuit 106 a, the sample hold andsignal processing circuit 106 b, and the signal output driver circuit106 c is shown in FIG. 17. Embodiment 8 shows a case in which all of theTFTs are n-channel. The bias circuit 106 a has a bias TFT 510 a. Thepolarity of the bias TFT 510 a is the same as the polarity of the sensordriver TFTs 223 of each pixel, and forms source follower circuits withthe sensor driver TFTs 223.

A gate electrode of the bias TFT 510 a is connected to a bias signalline 511. One of a source electrode and a drain electrode of the biasTFT 510 a is connected to the sensor signal output line SSi, and theother one is connected to an electric power source reference line 510 b.Note that although embodiment 8 shows a case in which the bias TFT 510 ais an n-channel TFT, the bias TFT 510 a is connected to an electricpower source line when the bias TFT 510 a is a p-channel TFT.

A transfer signal line 513 is connected to a gate electrode of atransfer TFT 512. One of a source electrode and a drain electrode of thetransfer TFT 512 is connected to the sensor signal output line SSi, andthe other one is connected to a capacitor 514 b. The transfer TFT 512operates in the case of transferring the electric potential of thesensor signal output line SSi to the capacitor 514 b. Further, althoughonly an n-channel transfer TFT 512 is used in embodiment 8, a p-channeltransfer TFT can also be added and connected in parallel with then-channel transfer TFT 512.

The capacitor 514 b is connected to the transfer TFT 512 and to aelectric power source reference line 514 c. The capacitor 514 btemporarily stores signals output from the sensor signal output linesSSI. A gate electrode of a discharge TFT 514 a is connected to apre-discharge signal line 515. Further, one of a source electrode and adrain electrode of the discharge TFT 514 a is connected to the capacitor514 b, and the other one is connected to the electric power sourcereference line 514 c. The discharge TFT 514 a plays the role ofdischarging an electric charge on the capacitor 514 b before theelectric potential of the sensor signal output line SSi is input to thecapacitor 514 b.

Note that the structure of the sensor source signal line driver circuit106 of the present invention is not limited to the structure of FIG. 16.It is possible to form the sensor source signal line driver circuit byadding circuits such as an analog to digital signal converter circuit ora noise reduction circuit to the structure shown in FIG. 16, and thesource signal line driver circuit can be freely designed.

A final selection TFT 516 is formed between the capacitor 514 b and afinal output wiring 518. One of a source electrode and a drain electrodeof the final selection TFT 516 is connected to the capacitor 514 b, andthe other one is connected to the final output wiring 518. A gateelectrode of the final selection TFT 516 is connected to a number icolumn final selection line 519.

The final selection lines 519 are scanned in order from the firstcolumn. if the number i column final selection line 519 is selected andthe final selection TFT 516 is placed in a conductive state, then theelectric potential of the capacitor 514 b and the electric potential ofthe number i column final selection line 519 become equal. The signalstored in the capacitor 514 b can then be output to the final outputline 518.

However, if electric charge is stored in the final output line 518before the signal is output to the final output line 518, then theelectric potential is influenced by that electric charge when the signalis output to the final output line 518. It is therefore necessary toperform an initialization operation of the electric potential of thefinal output line 518 to a certain electric potential value beforeoutputting the signal to the final output wiring 518.

A final reset TFT 517 a is arranged between the final output line 518and the electric power source reference line 517 b in FIG. 17. An i-thcolumn final reset line 520 is connected to a gate electrode of thefinal reset TFT 517 a. The number i column final reset line 520 isselected before selecting the number i column final selection line 519,and the electric potential of the final output line 518 is initializedto the electric potential of the electric power source reference line517 b. The number i column final selection line 519 is then selected,and the signal stored in the capacitor 514 b is output to the finaloutput line 518.

It is possible to extract the signal output to the final output line 518as is to the outside. However, the signal is weak, and it is thereforepreferable to amplify the signal before sending to the outside. Finaloutput amplifier circuits 106 d are shown in FIGS. 18 and 19 as circuitsfor amplifying signals. Although there are various types of circuits foramplifying signals, such as operational amplifiers, a source followercircuit, the simplest circuit structure, is shown as the amplifiercircuit structure in embodiment 8. Note that FIG. 18 shows an n-channelsource follower circuit, and that FIG. 19 shows a p-channel sourcefollower circuit.

FIG. 18 shows a circuit diagram of an n-channel source follower circuit.Input of signals to the final output amplifier circuit 106 d isperformed through the final output lines 518. The final output lines 518are arranged in a matrix shape in the pixel portion, and signals areoutput in order from the first column. Signals output from the finaloutput lines 518 are amplified by the final output amplifier circuit 106d, and are then output to the outside. The final output line 518 isconnected to a gate electrode of an amplification TFT 521 for finaloutput amplification. A drain electrode of the amplification TFT 521 forfinal output amplification is connected to the electric power sourceline 520, and a source electrode of the amplification TFT 521 isconnected to an output terminal. A Elate electrode of a bias TFT 522 forfinal output amplification is connected to a final output amplificationbias signal line 523. One of a source electrode and a drain electrode ofthe bias TFT 522 for final output amplification is connected to anelectric power source reference line 524, and the other one is connectedto a source electrode of the amplification TFT 521 for final outputamplification.

Next, FIG. 19 shows a circuit diagram of a p-channel source follower.The final output line 518 is connected to the gate electrode of theamplification TFT 521 for final output amplification. The drainelectrode of the amplification TFT 521 for final output amplification isconnected to the electric power source reference line 524, and thesource electrode is connected to the output terminal. The gate electrodeof the bias TFT 522 for final output amplification is connected to thefinal output amplification bias signal line 523. One of the sourceelectrode and the drain electrode of the final output amplification biasTFT 522 is connected to the electric power line 520, and the other oneis connected to the source electrode of the amplification TFT 521 forfinal output amplification. Note that the electric potential of thefinal output amplification bias signal line 523 shown in FIG. 19 isdifferent from the electric potential of the final output amplificationbias signal line 523 in using the n-channel source follower circuitshown in FIG. 18.

Further, it is possible to freely combine embodiment 8 with embodimentmodes 1 to 3, and with embodiments 1 to 8.

Embodiment 9

Operation of the sensor source signal line driver circuit 106 used inthe semiconductor device shown in FIG. 16 is explained next. A signaltiming chart for the sensor source signal line driver circuit 106 isshown in FIG. 20. A case of selecting the number i column sensorselection signal line SGi is shown as an example in embodiment 9.

First, the pre-discharge signal line 515 is selected when the number icolumn sensor selection signal line SGi is selected, and a discharge TFT514 is placed in a conductive state. The transfer signal line 513 isthen selected. Then, signals in each column are thus output to thecapacitor 514 b of each column from the pixels.

After signals of all the pixel are stored in each column of thecapacitors 514 b, the signals of each column are output to the finaloutput lines 518 in order. All columns are scanned by the signal outputdriver circuit 106 c during a period from non-selection of the transfersignal line 513 until selection of the sensor selection signal line SGi.First, the final reset line of the first column is selected, the finalreset TFT 517 a is placed in a conductive state, and the final outputline 518 is initialized to the electric potential of the electric powersource reference line 517 b. The final selection line of the firstcolumn is then selected, the final selection TFT 516 is placed in aconductive state, and the signals of the first column of the capacitors514 b are output to the final output lines 518.

Next, the final reset line of the second column is selected, the finalreset TFT 517 a is placed in a conductive state, and the final outputline 518 is initialized to the electric potential of the electric powersource reference line 517 b. The final selection line of the secondcolumn is then selected, the final selection TFT 516 is placed in aconductive state, and the signals of the second column of the capacitors514 b are output to the final output lines 518. Similar operations arethen repeated.

In the case of the number i column, the number i column final reset line520 is first selected, the final reset TFT 517 a is placed in aconductive state, and the final output line 518 is initialized to theelectric potential of the electric power source reference line 517 b.The number i column final selection line 519 is then selected, the finalselection TFT 516 is placed in a conductive state, and the signal in thenumber i column capacitor 514 b is output to the final output line 518.

Next, the number (i+1) column final reset line 520 is selected, thefinal reset TFT 517 a is placed in a conductive state, and the finaloutput line 518 is initialized to the electric potential of the electricpower source reference line 517 b. The number (i+1) column finalselection line 519 is then selected, the final selection TFT 516 isplaced in a conductive state, and the signal in the number (i+1) columncapacitor 514 is output to the final output line 518. Similar operationsare then repeated, and the signals of all columns are output to thefinal output lines 518 in order. The electric potential of the biassignal line 511 is kept fixed during this period. The signals output tothe final output wirings 518 are amplified by the final outputamplification circuit 106 d, and then output to the outside.

Note that in addition to PN type photodiodes, other components such asPIN type diodes, avalanche type diodes, NPN embedded type diodes,Schottky type diodes, x-ray photoconductors, and infrared sensors mayalso be used in the sensor portion for performing photoelectricconversion and the like. Further, after converting x-rays to light, thelight may also be read in by using a fluorescing material or ascintillator.

The photoelectric conversion elements are often connected to the inputterminals of source follower circuits, as discussed above. However, thephotoelectric conversion elements structured by sandwiching switchestherebetween, as photogate type, can also be used. Furthermore, thesignals also be input to the input terminals after processing so thatthe light intensity values becomes logarithmic values.

Note that although a semiconductor device in which the pixels arearranged in a two dimensional manner is described in embodiment 9, aline sensor in which pixels are arranged in one dimension can also berealized.

Furthermore, it is possible to freely combine embodiment 9 withembodiment modes 1 to 3, and with embodiments 1 to 8.

Embodiment 10

A cross sectional structure in a pixel portion of a semiconductor deviceof the present invention is explained in embodiment 10.

FIG. 21 shows a cross sectional diagram of a semiconductor device ofembodiment 10. Reference numeral 401 denotes a selection TFT, referencenumeral 402 denotes a driver TFT, 403 denotes a sensor reset TFT, 404denotes a sensor driver TFT, and reference numeral 405 denotes a sensorselection TFT.

Further, reference numeral 406 denotes a cathode electrode, 407 denotesa photoelectric conversion layer, and 408 denotes an anode electrode. Aphotodiode 421 is formed by the cathode electrode 406, the photoelectricconversion layer 407, and the anode electrode 408. Reference numeral 414denotes a sensor wiring, and the anode electrode 408 and an externalelectric power source are connected by the sensor wiring 414.

Reference numeral 409 denotes a pixel electrode (anode), 410 denotes alight emitting layer, 411 denotes a hole injecting layer, and 412denotes an opposing. electrode (cathode). A light emitting element 422is formed by the pixel electrode (anode) 409, the light emitting layer410, the hole injecting layer 411 and the opposing electrode (cathode)412. Reference numeral 413 denotes a protective film. Reference numeral415 denotes an interlayer insulating film, and the interlayer insulatingfilm functions as a bank and has a role in separating EL layers ofadjacent pixels.

Reference numeral 423 denotes a subject, and light emitted form thelight emitting element 422 is reflected by the subject 423 andirradiated to the photodiode 421. The subject 423 is placed on the sideof the substrate 430 on which the TFTs are formed in embodiment 10.

The selection TFT 401, the driver TFT 402, the sensor driver TFT 404,and the sensor selection TFT 405 are all n-channel TFTs in embodiment10. Further, the sensor reset TFT 403 is a p-channel TFT. Note that thepresent invention is not limited to this structure. The selection TFT401, the driver TFT 402, the sensor driver TFT 404, the sensor selectionTFT 405, and the sensor reset TFT 403 may each therefore be n-channelTFTs or p-channel TFTs.

However, if a source region or a drain region of the driver TFT 402 iselectrically connected to the cathode of the light emitting element asin embodiment 10, then it is preferable that the driver TFT 402 be an-channel TFT. Conversely, if the source region or the drain region ofthe driver TFT 402 is electrically connected to the anode of the lightemitting element, then it is preferable that the driver TFT 402 be ap-channel TFT.

Furthermore, if a drain region of the sensor reset TFT 403 iselectrically connected to the cathode electrode 406 of the photodiode421 as in embodiment 10, then it is preferable that the sensor reset TFT403 be a p-channel TFT and that the sensor driver TFT 404 be ann-channel TFT. Conversely, if the drain region of the sensor reset TFT403 is electrically connected to the anode electrode 408 of thephotodiode 421, and the sensor wiring 414 is electrically connected tothe cathode electrode 406, then it is preferable that the sensor resetTFT 403 be an n-channel TFT, and that the sensor driver TFT 404 be ap-channel TFT.

Furthermore, it is possible to freely combine embodiment 10 withembodiment modes 1 to 3, and with embodiments 1 to 9.

Embodiment 11

An example of a cross sectional structure in a pixel portion of asemiconductor device of the present invention is explained in embodiment11, differing from the example of embodiment 10.

FIG. 22 shows a cross sectional diagram of a semiconductor device ofembodiment 11. Reference numeral 501 denotes a selection TFT, referencenumeral 502 denotes a driver TFT, 503 denotes a sensor reset TFT, 504denotes a sensor driver TFT, and reference numeral 505 denotes a sensorselection TFT.

Further, reference numeral 506 denotes a cathode electrode, 507 denotesa photoelectric conversion layer, and 508 denotes an anode electrode. Aphotodiode 521 is formed by the cathode electrode 506, the photoelectricconversion layer 507, and the anode electrode 508. Reference numeral 514denotes a sensor wiring, and the anode electrode 508 and an externalelectric power source are electrically connected by the sensor wiring514. Further, the cathode electrode 506 of the photodiode 521 and adrain region of the sensor reset TFT 503 are electrically connected.

Reference numeral 509 denotes a pixel electrode (anode), 510 denotes alight emitting layer, and 511 denotes an opposing electrode (cathode). Alight emitting element 522 is formed by the pixel electrode (anode) 509,the light emitting layer 510, and the opposing electrode (cathode) 511.Reference numeral 513 denotes a protective film. Reference numeral 515denotes an interlayer insulating film, and the interlayer insulatingfilm functions as a bank and plays a role in separating EL layers ofadjacent pixels.

Reference numeral 523 denotes a subject, and light emitted form thelight emitting element 522 is reflected by the subject 523 andirradiated to the photodiode 521. Differing from embodiment 10, thesubject is placed on the side of the substrate 530 on which the TFTs arenot formed in embodiment 11.

The selection TFT 501, the sensor driver TFT 504, and the sensorselection TFT 505 are all n-channel TFTs in embodiment 11. Further, thedriver TFT 502 and the sensor reset TFT 503 are p-channel TFTs. Notethat the present invention is not limited to this structure. Theselection TFT 501, the driver TFT 502, the sensor driver TFT 504, thesensor selection TFT 505, and the sensor reset TFT 503 may eachtherefore be n-channel TFTs or p-channel TFTs.

However, if a source region or a drain region of the driver TFT 502 iselectrically connected to the anode 509 of the light emitting element522, then it is preferable that the driver TFT 502 be a p-channel TFT,as in embodiment 11. Conversely, if the source region or the drainregion of the driver TFT 502 is electrically connected to the cathode ofthe light emitting element 522, then it is preferable that the driverTFT 502 be an n-channel TFT.

Furthermore, if a drain region of the sensor reset TFT 503 iselectrically connected to the cathode electrode 506 of the photodiode521, as in embodiment 11, then it is preferable that the sensor resetTFT 503 be a p-channel TFT and that the sensor driver TFT 504 be ann-channel TFT. Conversely, if the drain region of the sensor reset TFT503 is electrically connected to the anode electrode 508 of thephotodiode 521, and the sensor wiring 514 is electrically connected tothe cathode electrode 506, then it is preferable that the sensor resetTFT 503 be an n-channel TFT, and that the sensor driver TFT 504 be ap-channel TFT.

Note that the photodiode of embodiment 11 can be formed at the same timeas the other TFTs, and therefore the number of processing steps can besuppressed.

Furthermore, it is possible to freely combine embodiment 11 withembodiment modes 1 to 3, and with embodiments 1 to 10.

Embodiment 12

An example of a cross sectional structure in a pixel portion of asemiconductor device of the present invention is explained in embodiment12, which is different from the example of embodiments 10 and 11.

FIG. 23 shows a cross sectional diagram of a semiconductor device ofembodiment 12. Reference numeral 601 denotes a selection TFT, referencenumeral 602 denotes a driver TFT, 603 denotes a sensor reset TFT, 604denotes a sensor driver TFT, and reference numeral 605 denotes a sensorselection TFT.

Further, reference numeral 606 denotes a cathode electrode, 607 denotesa photoelectric conversion layer, and 608 denotes an anode electrode. Aphotodiode 621 is formed by the cathode electrode 606, the photoelectricconversion layer 607, and the anode electrode 608. Reference numeral 614denotes a sensor wiring, and the anode electrode 608 and an externalelectric power source are electrically connected by the sensor wiring614. Further, the cathode electrode 606 of the photodiode and a drainregion of the sensor reset TFT 603 are electrically connected.

Reference numeral 609 denotes a pixel electrode (anode), 610 denotes alight emitting layer, and 611 denotes an opposing electrode (cathode). Alight emitting element 622 is formed by the pixel electrode (anode) 609,the light emitting layer 610, and the opposing electrode (cathode) 611.Reference numeral 613 denotes a protective film. Reference numeral 615denotes an interlayer insulating film, and the interlayer insulatingfilm functions as a bank and has a role in separating EL layers ofadjacent pixels.

Reference numeral 623 denotes a subject, and light emitted form thelight emitting element 622 is reflected by the subject 623 andirradiated to the photodiode 621. Unlike in embodiment 10, the subject623 is placed on the side of the substrate 630 on which the TFTs are notformed in embodiment 12.

The selection TFT 601, the sensor driver TFT 604, and the sensorselection TFT 605 are all n-channel TFTs in embodiment 12. Further, thedriver TFT 602 and the sensor reset TFT 603 are p-channel TFTs. Notethat the present invention is not limited to this structure. Theselection TFT 601, the driver TFT 602, the sensor driver TFT 604, thesensor selection TFT 605, and the sensor reset TFT 603 may eachtherefore be n-channel TFTs or p-channel TFTs.

However, if a source region or a drain region of the driver TFT 602 iselectrically connected to the anode of the light emitting element as inembodiment 12, then it is preferable that the driver TFT 602 be ap-channel TFT. Conversely, if the source region or the drain region ofthe driver TFT 602 is electrically connected to the cathode of the lightemitting element, then it is preferable that the driver TFT 602 be ann-channel TFT.

Furthermore, if a drain region of the sensor reset TFT 603 iselectrically connected to the cathode electrode 606 of the photodiode621 as in embodiment 12, then it is preferable that the sensor reset TFTbe a p-channel TFT and that the sensor driver TFT 604 be an n-channelTFT. Conversely, if the drain region of the sensor reset TFT 603 iselectrically connected to the anode electrode 608 of the photodiode 621,and the sensor wiring 614 is electrically connected to the cathodeelectrode 606, then it is preferable that the sensor reset TFT 603 be ann-channel TFT, and that the sensor driver TFT 504 be a p-channel TFT.

Furthermore, it is possible to freely combine embodiment 12 withembodiment modes 1 to 3, and with embodiments 1 to 11.

Embodiment 13

An example of a cross sectional structure in a pixel portion of asemiconductor device of the present invention is explained in embodiment13, which is different from the example of embodiments 10 to 12.

FIG. 24 shows a cross sectional diagram of a semiconductor device ofembodiment 13. Reference numeral 701 denotes a selection TFT, referencenumeral 702 denotes a driver TFT, 703 denotes a sensor reset TFT, 704denotes a sensor driver TFT, and reference numeral 705 denotes a sensorselection TFT.

Further, reference numeral 706 denotes a cathode electrode, 707 denotesa photoelectric conversion layer, and 708 denotes an anode electrode. Aphotodiode 721 is formed by the cathode electrode 706, the photoelectricconversion layer 707, and the anode electrode 708. Reference numeral 714denotes a sensor wiring, and the anode electrode 706 and an externalelectric power source are electrically connected by the sensor wiring714. Further, the anode electrode 708 of the photodiode 721 and a drainregion of the sensor reset TFT 703 are electrically connected.

Further, reference numeral 709 denotes a pixel electrode (cathode), 710denotes a light emitting layer, 711 denotes a hole injecting layer, and712 denotes an opposing electrode (anode). A light emitting element 722is formed by the pixel electrode (cathode) 709, the light emitting layer710, hole injecting layer 711, and the opposing electrode (anode) 712.Reference numeral 713 denotes a protective film. Reference numeral 715denotes an interlayer insulating film, and the interlayer insulatingfilm functions as a bank and has a role in separating EL layers ofadjacent pixels.

Reference numeral 723 denotes a subject, and light emitted form thelight emitting element 722 is reflected by the subject 723 andirradiated to the photodiode 721. The subject 723 is placed on the sideof the substrate 730 on which the TFTs are formed in embodiment 13.

The selection TFT 701, the driver TFT 702, and the sensor reset TFT 703are all n-channel TFTs in embodiment 13. Further, the sensor driver TFT704 and the sensor selection TFT 705 are p-channel TFTs. Note that thepresent invention is not limited to this structure. The selection TFT701, the driver TFT 702, the sensor driver TFT 704, the sensor selectionTFT 705, and the sensor reset TFT 703 may each therefore be n-channelTFTs or p-channel TFTs.

However, if a source region or a drain region of the driver TFT 702 iselectrically connected to the anode 709 of the light emitting element722 as in embodiment 13, then it is preferable that the driver TFT 702be an n-channel TFT. Conversely, if the source region or the drainregion of the driver TFT 702 is electrically connected to the cathode712 of the light emitting element 722, then it is preferable that thedriver TFT 702 be a p-channel TFT.

Furthermore, if a drain region of the sensor reset TFT 703 iselectrically connected to the anode electrode 708 of the photodiode 721as in embodiment 11, then it is preferable that the sensor reset TFT 703be an n-channel TFT and that the sensor driver TFT 704 be a p-channelTFT. Conversely, if the drain region of the sensor reset TFT 703 isconnected to the cathode electrode 706 of the photodiode 721, and thesensor wiring 714 is connected to the anode electrode 708, then it ispreferable that the sensor rest TFT 703 be a p-channel TFT, and that thesensor driver TFT 704 be an n-channel TFT.

Note that the photodiode 721 of embodiment 13 can be formed at the sametime when other TFTs are formed, and therefore the number of processingsteps can be suppressed.

Furthermore, it is possible to freely combine embodiment 13 withembodiment modes 1 to 3, and with embodiments 1 to 12.

Embodiment 14

An example of a cross sectional structure of a pixel portion of asemiconductor device of the present invention is explained in embodiment14, differing from the examples of embodiments 10 to 13.

A cross sectional diagram of a semiconductor device of embodiment 14 isshown in FIG. 25. Reference numeral 801 denotes a liquid crystalselection TFT, reference numeral 802 denotes a capacitor, 803 denotes asensor reset TFT, 804 denotes a sensor driver TFT, and reference numeral805 denotes a sensor selection TFT.

Further, reference numeral 806 denotes a light shielding layer which ismade from Mg or Ti. Reference numeral 807 denotes a photodiode which isformed from three layers, a p-type semiconductor layer, a photoelectricconversion layer, and an n-type semiconductor layer. Reference numeral808 denotes a transparent conductive layer made from ITO, and referencenumeral 809 denotes a sensor signal output line SS.

Reference numeral 810 denotes a pixel electrode (cathode), 811 denotes aliquid crystal layer, 812 denotes an orientation film, 813 denotes anITO film, and reference numeral 814 denotes a transparent insulatingsubstrate.

Reference numeral 840 denotes a photoconductive plate, and a front lightis formed in an edge of the photoconductive plate. Reference numeral 823denotes a substrate, and light emitted from the photoconductive plate840 is reflected by the subject 823 and irradiated to the photodiode807. The subject is placed on the side of a substrate 830 on which theTFTs are formed in embodiment 14.

The liquid crystal selection TFT 801, the capacitor 802, and the sensorreset TFT 803 are all n-channel TFTs in embodiment 14. Further, thesensor driver TFT 804 and the sensor selection TFT 805 are p-channelTFTs. Note that the present invention is not limited to this structure.The liquid crystal selection TFT 801, the capacitor 802, the sensordriver TFT 804, the sensor selection TFT 805, and the sensor reset TFT803 each can therefore be n-channel TFTs or p-channel TFTs.

Note that it is possible to freely combine embodiment 14 with embodimentmodes 1 to 3, and with embodiments 1 to 13.

Embodiment 15

An example of a cross sectional structure in a pixel portion of asemiconductor device of the present invention is explained in embodiment15, which is different from those of embodiments 10 to 14.

A cross sectional diagram of a semiconductor device of embodiment 15 isshown in FIG. 26. Reference numeral 901 denotes a liquid crystalselection TFT, reference numeral 902 denotes a capacitor, 903 denotes asensor reset TFT, 904 denotes a sensor driver TFT, and reference numeral905 denotes a sensor selection TFT.

Further, reference numeral 906 denotes a light shielding layer which ismade from Mg or Ti. Reference numeral 907 denotes a photodiode which isformed from three layers, a p-type semiconductor layer, a photoelectricconversion layer, and an n-type semiconductor layer. Reference numeral908 denotes a transparent conductive layer made from ITO, and referencenumeral 909 denotes a sensor signal output line SS.

Reference numeral 910 denotes a pixel electrode (cathode), 911 denotes aliquid crystal layer, 912 denotes an orientation film, 913 denotes anITO film (transparent conductive film), and reference numeral 914denotes a transparent insulating substrate.

Reference numeral 940 denotes a photoconductive plate, and a back lightis formed in an edge of the photoconductive plate 940. Reference numeral923 denotes a substrate, and light emitted from the photoconductiveplate 940 is reflected by the subject 923 and irradiated to thephotodiode 907. The subject 923 is placed on the side of the substrate930 on which the TFTs are formed in embodiment 15.

The liquid crystal selection TFT 901, the capacitor 902, and the sensorreset TFT 903 are all n-channel TFTs in embodiment 15. Further, thesensor driver TFT 904 and the sensor selection TFT 905 are p-channelTFTs. Note that the present invention is not limited to this structure.The liquid crystal selection TFT 901, the capacitor 902, the sensordriver TFT 904, the sensor selection TFT 905, and the sensor reset TFT903 can therefore each be n-channel TFTs or p-channel TFTs.

Note that it is possible to freely combine embodiment 15 with embodimentmodes 1 to 3, and with embodiments 1 to 14.

Embodiment 16

The following can be given as examples of electronic equipment using, asemiconductor device of the present invention: video cameras, digitalcameras, goggle type displays (head mounted displays), navigationsystems, audio playback devices (such as car stereos, and audiocomponents), notebook type personal computers, game devices, portableinformation terminals (such as mobile computers, portable telephones,portable game machines, or electronic books), and image playback devicesprepared with a recording medium (specifically, a device which plays arecording medium such as a digital video disk (DVD) and is equipped witha display for displaying the images played). In particular, it ispreferable to use a light emitting device for portable informationterminals, whose screens are often viewed from an angle, in order toincrease the angle of view. Specific examples of these electronicdevices are shown in FIGS. 27A to 27C.

FIG. 27A is a digital video camera, and contains components such as amain body 2101, a display portion 2102, an external connection port2105, an image receiving portion 2103, operation keys 2104, and ashutter 2106. The semiconductor device of the present invention can beused in the display portion 2102.

FIG. 27B is a mobile computer, and contains components such as a mainbody 2301, a display portion 2302, a switch 2303, operation keys 2304,and an infrared port 2305. The semiconductor device of the presentinvention can be used in the display portion 2302.

FIG. 27C is a portable telephone, and contains components such as a mainbody 2701, a frame 2702, a display portion 2703, a voice input portion2704, a voice output portion 2705, operation keys 2706, an externalconnection port 2707, and an antenna 2708. The semiconductor device ofthe present invention can be used in the display portion 2703. Note thatthe display portion 2703 can reduce the electric power consumption ofthe portable telephone by displaying white color characters in a blackcolor background.

Note that it will become possible to use the semiconductor device of thepresent invention in front type and rear type projectors by magnifyingand projecting the light containing image information output by thesemiconductor device, provided that the brightness of the light emittedby the light emitting material increases in the future. Further, theaforementioned electronic equipment often display informationdistributed through electronic communication circuits such as theInternet and cable television (CATV), and in particular, the display ofdynamic image information has increased. The response speed of the lightemitting materials in the semiconductor device of the present inventionwhen using light emitting elements is extremely high, and therefore thesemiconductor device is desirable for the display of dynamic images.

Further, portions emitting light consume energy in the semiconductordevice of the present invention when using light emitting elements, andit is therefore preferable to display information such that the lightemitting portions become as small as possible. It is thereforepreferable to drive the light emitting portions so that non-lightemitting portions are used as a background and character information isformed by the light emitting, portions when using the light emittingdevice in display portions which mainly display character informationsuch as those of portable information terminals, in particular portabletelephones and audio playback devices.

The applicable range of the present invention is thus extremely wide,and it is possible to use the present invention in electronic equipmentof all fields. Further, it is possible to freely combine embodiment 16with embodiments 1 to 3, and with embodiments 1 to 15.

Embodiment 17

A portable hand scanner is explained in embodiment 17 using FIG. 28A to28C, differing from the examples of electronic equipment using asemiconductor device of the present invention discussed in embodiment16.

Reference numeral 1801 denotes a substrate, reference numeral 1802denotes a pixel portion, reference numeral 1803 denotes a touch panel,and reference numeral 1804 denotes a touch pen. The touch panel 1803 hastransparency, and light emitted form the pixel portion 1802, as well aslight made incident on the pixel portion 1802, can pass through thetouch panel 1803. An image of a subject can be read in through the touchpanel 1803. Further, it is possible to see an image on the pixel portion1802 through the touch panel 1803 in the case where an image isdisplayed in the pixel portion 1802.

Information on the position at which the touch pen 1804 and the touchpanel 1803 are in contact with each other can be taken in by thesemiconductor device as an electronic signal if the touch pen 1804touches the touch panel 1803. The touch panel 1803 and the touch pen1804 used in embodiment 17 has transparency, and provided thatinformation on the position of portions at which the touch pen 1804 andthe touch panel 1803 contact can be read in by the semiconductor deviceas an electronic signal, known touch panels and touch pens can be used.

An image is read in, the image read in the pixel portion 1802 isdisplayed, and write in by the touch pen 1804 can be performed to theread in image in the semiconductor device of the present inventionhaving the above structure. The semiconductor device of the presentinvention can perform read in of an image, display of the image, andwrite in to the image in the pixel portion 1802. The size of thesemiconductor device itself can therefore be controlled, and thesemiconductor device can be made to possess many types of functions.

FIG. 28B is a portable hand scanner differing from that of FIG. 28A, andis structured by a main body 1901, a pixel portion 1902, an upper over1903, an external connection port 1904, and operation switches 1905.FIG. 28C is a diagram of the same portable hand scanner as in FIG. 28B,in which the cover 1903 is closed.

It is possible to display a read in image in the pixel portion 1902 inthe semiconductor device of the present invention, and verification ofthe input image can be made as it is read in, without forming a newsemiconductor device for electronic display.

Furthermore, it is possible to send the image signal input by thesemiconductor device 1902 to electronic equipment connected externallyto the portable hand scanner from the external connection port 1904, andimage correction, synthesis, editing, and the like can be performed bysoftware.

Note that it is possible to freely combine embodiment 17 with embodimentmodes 1 to 3, and with embodiments 1 to 16.

By forming light emitting elements as a light source, and by formingphotodiodes as photoelectric conversion elements on the same substrate,the semiconductor device of the present invention can realizeminiaturization. Further, it becomes possible to control two signallines by using one driver circuit by using an output switching circuit.As a result, it becomes possible to make the surface area occupied bythe driver circuits of the semiconductor device smaller, and to realizea reduction in size of the semiconductor device.

1. (canceled)
 2. A semiconductor device comprising: a first and a secondsignal lines; third signal lines; a display portion; liquid crystalelement portions in the display portion, each liquid crystal elementportion comprising a pixel electrode and a transistor with a gateelectrically connected to the first signal line and one of a source anda drain electrically connected to one of the third signal lines; asensor portion in the display portion, the display portion including asensor, the sensor including a sensor electrode; and a liquid crystallayer over one of the pixel electrodes, wherein the one of the pixelelectrodes is over the sensor electrode, wherein the sensor portion iselectrically connected to the second signal line, and wherein the sensorportion is shared by a plurality of the liquid crystal element portions.3. The semiconductor device according to claim 2, wherein thesemiconductor device is configured so that in a first period: a firstpulse signal is input into the first signal line, and a first constantpotential is applied to the second signal line, and wherein thesemiconductor device is configured so that in a second period: a secondconstant potential is applied to the first signal line, a second pulsesignal is input into the second signal line, and a signal is output fromthe sensor portion.
 4. A semiconductor device comprising: a first to afourth signal lines; a display portion; a first liquid crystal elementportion in the display portion, the first liquid crystal element portioncomprising a first pixel electrode and a first transistor with a gateelectrically connected to the first signal line; a second liquid crystalelement portion in the display portion, the second liquid crystalelement portion comprising a second pixel electrode and a secondtransistor with a gate electrically connected to the first signal line;a sensor portion in the display portion, the sensor portion including asensor, the sensor including a sensor electrode; and a liquid crystallayer over the first pixel electrode, wherein the first pixel electrodeis over the sensor electrode, wherein one of a source and a drain of thefirst transistor and one of a source and a drain of the secondtransistor are electrically connected to the third and to the fourthsignal lines, respectively, wherein the sensor portion is electricallyconnected to the second signal line, and wherein the sensor portionoverlaps with each of the third and the fourth signal lines.
 5. Asemiconductor device comprising: a first to a fourth signal lines; adisplay portion; a first liquid crystal element portion in the displayportion, the first liquid crystal element portion comprising a firstpixel electrode and a first transistor with a gate electricallyconnected to the first signal line; a second liquid crystal elementportion in the display portion, the second liquid crystal elementportion comprising a second pixel electrode and a second transistor witha gate electrically connected to the first signal line; a sensor portionin the display portion, the sensor portion including a sensor, thesensor including a sensor electrode; and a liquid crystal layer over thefirst pixel electrode, wherein the first pixel electrode is over thesensor electrode, wherein one of a source and a drain of the firsttransistor and one of a source and a drain of the second transistor areelectrically connected to the third and to the fourth signal lines,respectively, wherein the sensor portion is electrically connected tothe second signal line, wherein the sensor portion overlaps with each ofthe third and the fourth signal lines, wherein the semiconductor deviceis configured so that in a first period: a first pulse signal is inputinto the first signal line, and a first constant potential is applied tothe second signal line, and wherein the semiconductor device isconfigured so that in a second period: a second constant potential isapplied to the first signal line, a second pulse signal is input intothe second signal line, and a signal is output from the sensor portion.6. The semiconductor device according to claim 2, wherein the sensor isa photodiode.
 7. The semiconductor device according to claim 4, whereinthe sensor is a photodiode.
 8. The semiconductor device according toclaim 5, wherein the sensor is a photodiode.
 9. The semiconductor deviceaccording to claim 2, wherein the sensor portion comprises a transistorin the display portion.
 10. The semiconductor device according to claim4, wherein the sensor portion comprises a transistor in the displayportion.
 11. The semiconductor device according to claim 5, wherein thesensor portion comprises a transistor in the display portion.
 12. Thesemiconductor device according to claim 2, wherein a circuit driving thesensor portion comprises transistor in a same plane as the transistorsof the liquid crystal element portions.
 13. The semiconductor deviceaccording to claim 4, wherein a circuit driving the sensor portioncomprises transistor in a same plane as the transistors of the liquidcrystal element portions.
 14. The semiconductor device according toclaim 5, wherein a circuit driving the sensor portion comprisestransistor in a same plane as the transistors of the liquid crystalelement portions.